Document
FDS6575
September 2001
FDS6575
P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications wtih a wide range of gate drive voltage (2.5V – 8V).
Applications
• Power management • Load switch • Battery protection
Features
• –10 A, –20 V. RDS(ON) = 13 mΩ @ VGS = –4.5 V RDS(ON) = 17 mΩ @ VGS = –2.5 V
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• High current and power handling capability
DD DD DD DD
SO-8
Pin 1SO-8 SS SS SS GG
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS V GSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6575
FDS6575
13’’
5
4
6
3
7
2
8
1
Ratings
–20 ±8 –10 –50 2.5 1.5 1.2 –55 to +175
50 125 25
Tape width 12mm
Units
V V A
W
°C
°C/W °C/W °C/W
Quantity 2500 units
©2001 Fairchild Semiconductor Corporation
FDS6575 Rev F(W)
FDS6575
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BV DSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA
–20
V
∆BV DSS ∆TJ
IDSS
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = 0 V
–13
mV/°C
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 8 V, VDS = 0 V
100 nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –8 V, VDS = 0 V
–100 nA
On Characteristics (Note 2)
V GS(th)
Gate Threshold Voltage
∆V GS(th) ∆TJ
RDS(on)
Gate Threshold Voltage Temperature Coefficient
Static Drain–Source On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = –250 µA
–0.4
ID = –250 µA, Referenced to 25°C
VGS = –4.5 V, ID = –10 A VGS = –2.5 V, ID = –9 A VGS= –4.5 V, ID =–10A, TJ=125°C
VGS = –4.5 V, VDS = –5 V
–50
VDS = –5 V,
ID = –10 A
–0.6 3 8.5 11 11
57
–1.5
13 17 20
V mV/°C
mΩ
A S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = –10 V, V GS = 0 V, f = 1.0 MHz
4951
pF
884
pF
451
pF
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = –10V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω
VDS = –10 V, ID = –10 A, VGS = –4.5 V
16 29
ns
9
18
ns
196 314 ns
78 125.