DatasheetsPDF.com

FDS6575 Dataheets PDF



Part Number FDS6575
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description P-Channel MOSFET
Datasheet FDS6575 DatasheetFDS6575 Datasheet (PDF)

FDS6575 September 2001 FDS6575 P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications wtih a wide range of gate drive voltage (2.5V – 8V). Applications • Power management • Load switch • Battery protection Features • –10 A, –20 V. RDS(ON) = 13 mΩ @ VGS = –4.5 V RDS(ON) = 17 mΩ @ VGS = –2.5 V • Low gate charg.

  FDS6575   FDS6575



Document
FDS6575 September 2001 FDS6575 P-Channel 2.5V Specified PowerTrench® MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications wtih a wide range of gate drive voltage (2.5V – 8V). Applications • Power management • Load switch • Battery protection Features • –10 A, –20 V. RDS(ON) = 13 mΩ @ VGS = –4.5 V RDS(ON) = 17 mΩ @ VGS = –2.5 V • Low gate charge • High performance trench technology for extremely low RDS(ON) • High current and power handling capability DD DD DD DD SO-8 Pin 1SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient RθJ C Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS6575 FDS6575 13’’ 5 4 6 3 7 2 8 1 Ratings –20 ±8 –10 –50 2.5 1.5 1.2 –55 to +175 50 125 25 Tape width 12mm Units V V A W °C °C/W °C/W °C/W Quantity 2500 units ©2001 Fairchild Semiconductor Corporation FDS6575 Rev F(W) FDS6575 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V ∆BV DSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = 0 V –13 mV/°C –1 µA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA On Characteristics (Note 2) V GS(th) Gate Threshold Voltage ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current gFS Forward Transconductance VDS = VGS, ID = –250 µA –0.4 ID = –250 µA, Referenced to 25°C VGS = –4.5 V, ID = –10 A VGS = –2.5 V, ID = –9 A VGS= –4.5 V, ID =–10A, TJ=125°C VGS = –4.5 V, VDS = –5 V –50 VDS = –5 V, ID = –10 A –0.6 3 8.5 11 11 57 –1.5 13 17 20 V mV/°C mΩ A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = –10 V, V GS = 0 V, f = 1.0 MHz 4951 pF 884 pF 451 pF Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDD = –10V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω VDS = –10 V, ID = –10 A, VGS = –4.5 V 16 29 ns 9 18 ns 196 314 ns 78 125.


FDS6574A FDS6575 FDS6576


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)