DatasheetsPDF.com

FDS6670A Dataheets PDF



Part Number FDS6670A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDS6670A DatasheetFDS6670A Datasheet (PDF)

FDS6670A June 2003 FDS6670A Single N-Channel, Logic Level, PowerTrench® MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 13 A, 30 V..

  FDS6670A   FDS6670A



Document
FDS6670A June 2003 FDS6670A Single N-Channel, Logic Level, PowerTrench® MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • 13 A, 30 V. RDS(ON) = 8 mΩ @ VGS = 10 V RDS(ON) = 10 mΩ @ VGS = 4.5 V • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability DD DD DD DD SO-8 Pin 1 SO-8 SS SS SS GG 5 4 6 3 7 2 8 1 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS6670A FDS6670A 13’’ Ratings 30 ±20 13 50 2.5 1.0 –55 to +150 50 125 25 Tape width 12mm Units V V A W °C °C/W Quantity 2500 units ©2003 Fairchild Semiconductor Corporation FDS6670A Rev F (W) FDS6670A Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSS Gate–Body Leakage VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ=55°C VGS = ±20 V, VDS = 0 V On Characteristics (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current gFS Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 13 A VGS = 4.5 V, ID = 10.5 A VGS= 10 V, ID = 13 A, TJ=125°C VGS = 10 V, VDS = 5 V VDS = 15 V, ID = 13 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = 15 V, f = 1.0 MHz V GS = 0 V, VGS = 15 mV, f = 1.0 MHz Switching Characteristics (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = 10 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω VDS = 15 V, VGS = 5 V ID = 13 A, Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge IF = 13 A, diF/dt = 100 A/µs 30 V 26 mV/°C 1 µA 10 µA ±100 nA 1 1.8 3 V –5.3 mV/°C 6 8 mΩ 7.2 10 8.5 14 50 A 55 S 2220 pF 535 pF 200 pF 1.7 Ω 11 19 ns 13 24 ns 40 64 ns 13 24 ns 21 30 nC 6 nC 7 nC 2.1 A 0.7 1.2 V 31 nS 21 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper 2 Test: Pulse Width < 300µs, Duty Cycle < 2.0% b) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper FDS6670A Rev F (W) FDS6670A Typical Characteristics ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 50 VGS = 10V 40 4.5V 30 4.0V 3.5V 20 3.0V 10 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 1.6 ID = 13A VGS = 10V 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation with Temperature. 50 VDS = 5V 40 30 TA =125oC 20 25oC -55oC 10 0 2 2.25 2.5 2.75 3 3.25 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 VGS = 3.5V 1.4 4.0V 1.2 4.5V 5.0V 1 10V 0.8 0 10 20 30 40 50 ID, DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.025 0.02 ID = 6.5A RDS(ON), ON-RESISTANCE (OHM) 0.015 TA = 125oC 0.01 TA = 25oC 0.005 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. IS, REVERSE .


FDS6644 FDS6670A FDS6670S


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)