Document
FDS6670A
June 2003
FDS6670A
Single N-Channel, Logic Level, PowerTrench® MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
• 13 A, 30 V.
RDS(ON) = 8 mΩ @ VGS = 10 V RDS(ON) = 10 mΩ @ VGS = 4.5 V
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
DD DD DD DD
SO-8
Pin 1 SO-8 SS SS SS GG
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1b)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6670A
FDS6670A
13’’
Ratings
30 ±20 13 50 2.5 1.0 –55 to +150
50 125 25
Tape width 12mm
Units
V V A W °C
°C/W
Quantity 2500 units
©2003 Fairchild Semiconductor Corporation
FDS6670A Rev F (W)
FDS6670A
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS ∆TJ
IDSS
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ=55°C VGS = ±20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th) ∆TJ
RDS(on)
Gate Threshold Voltage Temperature Coefficient
Static Drain–Source On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 13 A VGS = 4.5 V, ID = 10.5 A VGS= 10 V, ID = 13 A, TJ=125°C VGS = 10 V, VDS = 5 V VDS = 15 V, ID = 13 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 15 V, f = 1.0 MHz
V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = 10 V, VGS = 10 V,
ID = 1 A, RGEN = 6 Ω
VDS = 15 V, VGS = 5 V
ID = 13 A,
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward Voltage
VGS = 0 V,
IS = 2.1 A (Note 2)
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge IF = 13 A,
diF/dt = 100 A/µs
30
V
26
mV/°C
1
µA
10
µA
±100 nA
1 1.8
3
V
–5.3
mV/°C
6
8
mΩ
7.2 10
8.5 14
50
A
55
S
2220
pF
535
pF
200
pF
1.7
Ω
11 19
ns
13 24
ns
40 64
ns
13 24
ns
21 30
nC
6
nC
7
nC
2.1
A
0.7 1.2
V
31
nS
21
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when mounted on a 1in2 pad of 2 oz copper
2 Test: Pulse Width < 300µs, Duty Cycle < 2.0%
b) 125°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper
FDS6670A Rev F (W)
FDS6670A
Typical Characteristics
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
50 VGS = 10V
40
4.5V
30
4.0V
3.5V
20
3.0V 10
0
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID = 13A VGS = 10V 1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with Temperature.
50 VDS = 5V
40
30
TA =125oC
20 25oC -55oC
10
0
2
2.25
2.5
2.75
3
3.25
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.8
1.6 VGS = 3.5V
1.4
4.0V 1.2
4.5V
5.0V
1
10V
0.8 0
10
20
30
40
50
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.025 0.02
ID = 6.5A
RDS(ON), ON-RESISTANCE (OHM)
0.015
TA = 125oC
0.01
TA = 25oC
0.005 2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
IS, REVERSE .