FDS6676

FDS6676 May 2003 FDS6676 30V N-Channel PowerTrench ® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features 14.5 A, 30 V. RDS(ON) = 7 mΩ @ V GS = 10 V RDS(ON) = 8 mΩ @ V GS = 4.5 V High performance trench technology for extremely low RDS(ON) Low gate charge (45 nC typ) High power and current handling capability Applications DC/DC converter D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Conti nuous – Pulsed T A=25oC unless otherwise noted Parameter Ratings 30 ± 16 (Note 1a) Units V V A W 14.5 50 2.5 1.2 1.0 –55 to +175 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 ° C/W ° C/W ° C/W Package Marking and Ordering Information Device Marking FDS6676 Device FDS6676 Reel Size 13’’ Tape width 12mm Quantity 2500 units ©2003 Fairchild Semiconductor Corporation FDS6676 Rev D (W) FDS6676 Electrical Characteristics Symbol WDSS IAR TA = 25°C unless ...