Document
FDS6678A
April 2001
FDS6678A
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
• 7.5 A, 30 V. RDS(ON) = 24 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 10 V
Applications
• DC/DC converter
• High performance trench technology for extremely low RDS(ON) • Low gate charge (13 nC typical) • High power and current handling capability
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±12
(Note 1a)
Units
V V A W
7.5 40 2.5 1.2 1.0 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS6678A Device FDS6678A Reel Size 13’’ Tape width 12mm Quantity 2500 units
2001 Fairchild Semiconductor Corporation
FDS6678A Rev C(W)
FDS6678A
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = –12 V , VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 4.5 V, VGS = 4.5 V, VGS = 10 V, VGS = 4.5 V, VDS = 10 V, ID = 6.8 A ID = 6.8 A TJ =125°C ID = 7.5 A, VDS = 5 V ID = 7.5 A
Min
30
Typ
Max Units
V
Off Characteristics
22 1 100 –100 mV/°C µA nA nA
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance
0.8
1.4 –4 20 29 18
2
V mV/°C
24 40 20
mΩ A
40 30
S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, V GS = 0 V, f = 1.0 MHz
1460 227 96
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω
8 9 35 7
16 18 58 14 21
ns ns ns ns nC nC nC
VDS = 15 V, ID = 7.5 A, VGS = 4.5 V
13 3.6 3.6
Drain–Source Diode Characteristics and Maximum Ratings
IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 2.1 A Voltage 2.1
(Note 2)
A V
0.7
1.2
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when 2 mounted on a 1in pad of 2 oz copper
b) 105°/W when 2 mounted on a .04 in pad of 2 oz copper
c) 125°/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6678A Rev C(W)
FDS6678A
Typical Characteristics
20 VGS = 10V 4.5V ID, DRAIN CURRENT (A) 15 3.5V 3.0V 2.5V 10
1.4 1.3 1.2 1.1 1 3.5V 4.0V 4.5V 5.0V 6.0V 0.9 2.0V 0.8 0 0.5 1 1.5 2 0 5 10 15 20 25 10V VGS = 3.0V
5
0 VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.06 RDS(ON), ON-RESISTANCE (OHM)
2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100
o
ID = 6.8A VGS = 4.5V
ID = 3.8 A 0.05 0.04 TA = 125 C 0.03 0.02 TA = 25 C 0.01 0 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)
o o
Figure 3. On-Resistance Variation withTemperature.
35 30 ID, DRAIN CURRENT (A) 25 20 15 10 5 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 25 C 125oC
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 TA = 125oC 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) 25oC -55oC
VDS = 5V
TA = -55oC
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6678A Rev C(W)
FDS6678A
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 7.5A 8 CAPACITANCE (pF) 15V 6 VDS = 5V 10V
2400 2000 1600 1200 800 400 0 0 5 10 15 20 25 30 0 5 10 Qg, GATE CHARGE (nC) COSS CRSS 15 20 25 30 CISS f = 1MHz VGS = 0 V
4
2
0
VDS, DRAIN TO .