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FDS6678A Dataheets PDF



Part Number FDS6678A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 30V N-Channel PowerTrench MOSFET
Datasheet FDS6678A DatasheetFDS6678A Datasheet (PDF)

FDS6678A April 2001 FDS6678A 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 7.5 A, 30 V. RDS(ON) = 24 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 10 V Applications • DC/DC converter • High performance trench technology for e.

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FDS6678A April 2001 FDS6678A 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features • 7.5 A, 30 V. RDS(ON) = 24 mΩ @ VGS = 4.5 V RDS(ON) = 20 mΩ @ VGS = 10 V Applications • DC/DC converter • High performance trench technology for extremely low RDS(ON) • Low gate charge (13 nC typical) • High power and current handling capability D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 30 ±12 (Note 1a) Units V V A W 7.5 40 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6678A Device FDS6678A Reel Size 13’’ Tape width 12mm Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDS6678A Rev C(W) FDS6678A Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = –12 V , VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 4.5 V, VGS = 4.5 V, VGS = 10 V, VGS = 4.5 V, VDS = 10 V, ID = 6.8 A ID = 6.8 A TJ =125°C ID = 7.5 A, VDS = 5 V ID = 7.5 A Min 30 Typ Max Units V Off Characteristics 22 1 100 –100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance 0.8 1.4 –4 20 29 18 2 V mV/°C 24 40 20 mΩ A 40 30 S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 15 V, V GS = 0 V, f = 1.0 MHz 1460 227 96 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 8 9 35 7 16 18 58 14 21 ns ns ns ns nC nC nC VDS = 15 V, ID = 7.5 A, VGS = 4.5 V 13 3.6 3.6 Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 2.1 A Voltage 2.1 (Note 2) A V 0.7 1.2 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when 2 mounted on a 1in pad of 2 oz copper b) 105°/W when 2 mounted on a .04 in pad of 2 oz copper c) 125°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS6678A Rev C(W) FDS6678A Typical Characteristics 20 VGS = 10V 4.5V ID, DRAIN CURRENT (A) 15 3.5V 3.0V 2.5V 10 1.4 1.3 1.2 1.1 1 3.5V 4.0V 4.5V 5.0V 6.0V 0.9 2.0V 0.8 0 0.5 1 1.5 2 0 5 10 15 20 25 10V VGS = 3.0V 5 0 VDS, DRAIN-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 RDS(ON), ON-RESISTANCE (OHM) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 o ID = 6.8A VGS = 4.5V ID = 3.8 A 0.05 0.04 TA = 125 C 0.03 0.02 TA = 25 C 0.01 0 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) o o Figure 3. On-Resistance Variation withTemperature. 35 30 ID, DRAIN CURRENT (A) 25 20 15 10 5 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 25 C 125oC o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 TA = 125oC 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) 25oC -55oC VDS = 5V TA = -55oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6678A Rev C(W) FDS6678A Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 7.5A 8 CAPACITANCE (pF) 15V 6 VDS = 5V 10V 2400 2000 1600 1200 800 400 0 0 5 10 15 20 25 30 0 5 10 Qg, GATE CHARGE (nC) COSS CRSS 15 20 25 30 CISS f = 1MHz VGS = 0 V 4 2 0 VDS, DRAIN TO .


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