FDS6680S
February 2000 PRELIMINARY
FDS6680S
30V N-Channel PowerTrench SyncFET™
General Description
The FDS6680S is de...
FDS6680S
February 2000 PRELIMINARY
FDS6680S
30V N-Channel PowerTrench SyncFET™
General Description
The FDS6680S is designed to replace a single SO-8 MOSFET and
Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680S includes an integrated
Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a
Schottky diode.
Features
11.5 A, 30 V. RDS(ON) = 0.011 Ω @ VGS = 10 V RDS(ON) = 0.016 Ω @ VGS = 4.5 V
Includes SyncFET
Schottky body diode Low gate charge (17nC typical) High performance trench technology for extremely low RDS(ON) and fast switching High power and current handling capability
Applications
DC/DC converter Motor drives
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
30 ±20
(Note 1a)
Units
V V A W
11.5 50 2.5 1.2 1 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50...