FDS6682

FDS6682 February 2004 FDS6682 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Applications DC/DC converter Features 14 A, 30 V. RDS(ON) = 7.5 mΩ @ VGS = 10 V RDS(ON) = 9.0 mΩ @ VGS = 4.5 V Low gate charge (22 nC typical) High performance trench technology for extremely low RDS(ON) High power and current handling capability D D D D SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) PD Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS6682 FDS6682 13’’ 5 6 7 8 Ratings 30 ±20 14 50 2.5 1.2 1.0 –55 to +150 50 25 Tape width 12mm 4 3 2 1 Units V V A W °C °C/W °C/W Quantity 2500 units ©2004 Fairchild Semiconductor Corporation FDS6682 Rev D(W) FDS6682 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise ...