Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDS6814
July 1999 ADVANCE INFORMATION
FDS6814
Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
T...
Description
FDS6814
July 1999 ADVANCE INFORMATION
FDS6814
Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process. It has been optimized for power management applications which require a wide range of gate drive voltage.
Features
8 A, 20 V. RDS(ON) = 0.020 Ω @ VGS = 4.5 V RDS(ON) = 0.030 Ω @ VGS = 2.5 V Rugged gate rating ( ±12V). Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Applications Low voltage DC/DC Converters Load switch Battery protection Power management
D2 D1 D1 S2 G2 D2
5 6 7 8
TA=25 C unless otherwise noted
o
4 3 2 1
SO-8
G1 S1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ratings
20 ±12
(Note 1a)
Units
V V A W
8 50 2.0
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
1.6 1.0 0.9 -55 to +150 °C
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS6814
1999 Fairchild Semiconductor Corporation
Device FDS6814
Reel Size 13’’
Tape width 12mm
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