Dual P-Channel 2.5V Specified PowerTrench MOSFET
FDS6815
July 1999 ADVANCE INFORMATION
FDS6815
Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
T...
Description
FDS6815
July 1999 ADVANCE INFORMATION
FDS6815
Dual P-Channel 2.5V Specified PowerTrenchTM MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrench TM process. It has been optimized for power management applications which require a wide range of gate drive voltages.
Features
-5.5 A, 20 V. RDS(ON) = 0.040 Ω @ VGS = 4.5 V RDS(ON) = 0.050 Ω @ VGS = 2.5 V Extended VGSS range ( ±12V) for battery applications. Low gate charge. Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability.
Applications Load switch Battery protection Power management
D2 D1 D1 S2 G2 D2
5 6 7 8 4 3 2 1
SO-8
Symbol
VDSS VGSS ID PD
G1 S1
Absolute Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
20 ±12
(Note 1a)
Units
V V A W
5.5 50 2.0
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
1.6 1.0 0.9 -55 to +150 °C
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS6815
1999 Fairchild Semiconductor Corporation
Device FDS6815
Reel Size 13’’
Tape Width 12mm
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