FDS6890A

FDS6890A November 1999 FDS6890A Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features 7.5 A, 20 V. RDS(ON) = 0.018 Ω @ VGS = 4.5 V RDS(ON) = 0.022 Ω @ VGS = 2.5 V. Low gate charge (23nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). High power and current handling capability. Applications DC/DC converter Motor drives D2 D1 D1 S2 G2 D2 5 6 7 8 4 3 2 1 pin 1 G1 S1 SO-8 Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A=25 oC unless otherwise noted Parameter Ratings 20 ±8 (Note 1a) Units V V A W 7.5 20 2.0 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 1.6 1.0 0.9 -55 to +150 °C T J, T stg Operating and Storage Junction Temperature Range Thermal Characteristics R θJA R θJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 90 ° C/W ° C/W Package Marking and Ordering Information Device Marking FDS6890A Device FDS6890A Reel Size 13 Tape W idth 12mm Quantity 2500 units 1999 Fairchild Semiconductor Corporation FDS6890A Rev. C FDS6890A E...