FDS6892A

FDS6892A October 2001 FDS6892A Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET General Description These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features 7.5 A, 20 V. RDS(ON) = 18 mΩ @ VGS = 4.5 V RDS(ON) = 24 mΩ @ VGS = 2.5 V Low gate charge (12 nC) High performance trench technology for extremely low RDS(ON) High power and current handling capability D2 D D2 D DD1 D1 D 5 6 7 Q1 4 3 2 Q2 SO-8 Pin 1 SO-8 G2 S2 S G1 S1 G S 8 1 S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25 C unless otherwise noted o Parameter Ratings 20 ± 12 (Note 1a) Units V V A W 7.5 30 2 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 1.6 1 0.9 –55 to +150 °C TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W Package Marking and Ordering Information Device Marking FDS6892A Device FDS6892A Reel Size 13’’ Tape width 12mm Quantity 2500 units ©2001 Fa...