FDS6912A

June 1998 FDS6912A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features 6 A, 30 V. RDS(ON) = 0.028 Ω @ VGS = 10 V RDS(ON) = 0.035 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge (typical 9 nC). High performance trench technology for extremely low RDS(ON). High power and current handling capability. These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 S FD 2A 1 69 G1 S2 G2 5 6 7 8 4 3 2 1 SO-8 pin 1 S1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25oC unless other wise noted FDS6912A 30 ±20 (Note 1a) Units V V A 6 20 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) 2 1.6 0.9 -55 to 150 W TJ,TSTG RθJA RθJC Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W °C/W © 1998 Fairchild Semiconductor Corporation FDS6912A Rev.C Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditi...