Dual P-Channel MOSFET
February 1999
FDS6975 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
These P-Channel Logic Level...
Description
February 1999
FDS6975 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features
-6 A, -30 V. RDS(ON) = 0.032 Ω @ VGS = -10 V, RDS(ON) = 0.045 Ω @ VGS = -4.5 V. Low gate charge (14.5nC typical). High performance trench technology for extremely low RDS(ON). High power and current handling capability.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D2 D2 D1 D1
S FD 75 69
S2 G2 G1
5 6 7 8
4 3 2 1
SO-8
pin 1
S1
Absolute Maximum Ratings
Symbol Parameter
TA = 25oC unless otherwise noted
Ratings Units
VDSS VGSS ID PD
Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c) (Note 1a)
-30 ±20 -6 -20 2 1.6 1 0.9 -55 to 150
V V A
W
TJ,TSTG RθJA RθJC
Operating and Storage Temperature Range
°C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
°C/W °C/W
FDS6975 Rev.C
© 1999 Fairchild Semiconductor Corporation
Electrical Characteristics (TA =...
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