FDS7064A

FDS7064A May 2000 ADVANCE INFORMATION FDS7064A 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS( ON) in a small package. Features 19 A, 30 V RDS(ON) = 6.5 mΩ @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) High power and current handling capability Fast switching Bottomless™ SO-8 package: Enhanced thermal performance in industry-standard package size Applications Synchronous rectifier DC/DC converter S D Bottomless SO-8 S D S D DS D 5 6 7 Bottom -sid e Drain Con tact 4 3 2 1 Pin 1 SO-8 G S S S S S S TA =25 oC unless otherwise noted G 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 30 ±12 (Note 1a) Units V V A W °C 19 60 3.9 –55 to +175 Power Dissipation for Single Operation (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RθJ A RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) 38 1 °C/W °C/W Package Marking and Ordering Information Device Marking FDS7064A Device FDS7064A Reel Size 13’’ Tape width 12mm Quantity 2500 units © 2000 Fairchild Semiconductor ...