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04M0B Datasheet, Equivalent, DIODE ARRAY.100V 300mA MONOLITHIC DIODE ARRAY 100V 300mA MONOLITHIC DIODE ARRAY |
| Part | 04M0B |
|---|---|
| Description | 100V 300mA MONOLITHIC DIODE ARRAY |
| Feature | 04M0
A Microsemi Company
580 Pleasant S t. Watertown, MA 02472 Phone: 617-924- 9280 Fax: 617-924-1235 DIE SPECIFICATI ON 100V 300mA MONOLITHIC DIODE ARRAY 5 • • • • FEATURES: INDIVIDUAL DIODES EQUIVALENT TO 1N4148 Vf MATCH TO 5 mV at 10 mA ULTRA-HIGH SPEED SWITCHI NG QUAD ISOLATED DIODES C C . 049" Abs olute Maximum Ratings: Symbol Parameter Limit 100 300 500 -65 to +150 -65 to + 200 Unit Vdc mAdc mAdc °C °C VBR(R) * 1 *2 Reverse Breakdown Voltage IO *1 Co ntinuous Forward Current IFSM *1 Peak S urge Current (tp= 1/120 s) Top Operatin g Junction Temperature Range Tstg Stora ge Temperature Range NOT . |
| Manufacture | Microsemi Corporation |
| Datasheet |
| Part | 04M0B |
|---|---|
| Description | 100V 300mA MONOLITHIC DIODE ARRAY |
| Feature | 04M0
A Microsemi Company
580 Pleasant S t. Watertown, MA 02472 Phone: 617-924- 9280 Fax: 617-924-1235 DIE SPECIFICATI ON 100V 300mA MONOLITHIC DIODE ARRAY 5 • • • • FEATURES: INDIVIDUAL DIODES EQUIVALENT TO 1N4148 Vf MATCH TO 5 mV at 10 mA ULTRA-HIGH SPEED SWITCHI NG QUAD ISOLATED DIODES C C . 049" Abs olute Maximum Ratings: Symbol Parameter Limit 100 300 500 -65 to +150 -65 to + 200 Unit Vdc mAdc mAdc °C °C VBR(R) * 1 *2 Reverse Breakdown Voltage IO *1 Co ntinuous Forward Current IFSM *1 Peak S urge Current (tp= 1/120 s) Top Operatin g Junction Temperature Range Tstg Stora ge Temperature Range NOT . |
| Manufacture | Microsemi Corporation |
| Datasheet |
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