FDS8333C

FDS8333C August 2002 FDS8333C 30V N & P-Channel PowerTrench® MOSFETs General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features Q1 4.1 A, 30V. RDS(ON) = 80 mΩ @ V GS = 10 V RDS(ON) = 130 mΩ @ V GS = 4.5 V –3.4 A, 30V. RDS(ON) = 130 mΩ @ V GS = –10 V RDS(ON) = 200 mΩ @ V GS = –4.5 V Q2 Low gate charge High performance trench technology for extremely low RDS(ON). High power and handling capability in a widely used surface mount package. Q2 D1 D D1 D DD2 D2 D 5 6 Q1 4 3 2 1 SO-8 Pin 1 SO-8 G2 S2 G G1 S S1 S 7 8 S Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous TA=25oC unless otherwise noted Parameter Q1 30 ±16 (Note 1a) Q2 –30 ±20 –3.4 –20 2 1.6 1 0.9 –55 to +150 Units V A 4.1 20 – Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) W TJ , TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics Rθ JA Rθ J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 °C/W Package Marking and Ordering Information Device Mar...