FDS8926A

February 1998 FDS8926A Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimize on-state resistance. These devices are particularly suited for low voltage applications such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 5.5 A, 30 V. RDS(ON) = 0.030 Ω @ VGS = 4.5 V RDS(ON) = 0.038 Ω @ VGS = 2.5 V. High density cell design for extremely low RDS(ON). Combines low gate threshold (fully enhanced at 2.5V) with high breakdown voltage of 30 V. High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 D2 D1 D1 D2 5 6 G2 7 8 4 3 2 1 S FD 6A 2 89 S2 G1 SO-8 pin 1 S1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25oC unless other wise noted FDS8926A 30 ±8 (Note 1a) Units V V A 5.5 20 2 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) W 1.6 1 0.9 -55 to 150 °C TJ,TSTG RθJA RθJC Operating and Storage Temperature Range THERMAL CHARACTER...