FDS8958A Transistor Datasheet

FDS8958A Datasheet, PDF, Equivalent


Part Number

FDS8958A

Description

Dual N & P-Channel Enhancement Mode Field Effect Transistor

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
Datasheet
Download FDS8958A Datasheet


FDS8958A
July 2003
FDS8958A
Dual N & P-Channel PowerTrench® MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
Q1: N-Channel
7.0A, 30V RDS(on) = 0.028@ VGS = 10V
RDS(on) = 0.040@ VGS = 4.5V
Q2: P-Channel
-5A, -30V RDS(on) = 0.052@ VGS = -10V
RDS(on) = 0.080@ VGS = -4.5V
Fast switching speed
High power and handling capability in a widely
used surface mount package
DD2
DD2
DD1
DD1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS8958A
FDS8958A
13”
©2003 Fairchild Semiconductor Corporation
Q2
5
6
Q1
7
8
4
3
2
1
Q1 Q2
30 30
±20 ±20
7 -5
20 -20
2
1.6
1
0.9
-55 to +150
Units
V
V
A
W
°C
78 °C/W
40 °C/W
Tape width
12mm
Quantity
2500 units
FDS8958A Rev F(W)

FDS8958A
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
BVDSS
TJ
IDSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
IGSSF
Gate-Body Leakage, Forward
IGSSR
Gate-Body Leakage, Reverse
VGS = 0 V,
ID = 250 µA
VGS = 0 V,
ID = -250 µA
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VDS = 24 V,
VGS = 0 V
VDS = -24 V, VGS = 0 V
VGS = 20 V,
VDS = 0 V
VGS = -20 V, VDS = 0 V
Q1 30
Q2 -30
V
Q1 25 mV/°C
Q2 -23
Q1 1 µA
Q2 -1
All 100 nA
All -100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS Forward Transconductance
VDS = VGS,
VDS = VGS,
ID = 250 µA
ID = -250 µA
ID = 250 µA, Referenced to 25°C
ID = -250 µA, Referenced to 25°C
VGS = 10 V,
ID = 7 A
VGS = 10 V, ID = 7 A, TJ = 125°C
VGS = 4.5 V,
ID = 6 A
VGS = -10 V,
ID = -5 A
VGS = -10 V, ID = -5 A, TJ = 125°C
VGS = -4.5 V, ID = -4 A
VGS = 10 V,
VDS = 5 V
VGS = -10 V,
VDS = -5 V
VDS = 5 V,
ID = 7 A
VDS = -5 V,
ID =-5 A
Q1 1 1.9 3
V
Q2 -1 -1.7 -3
Q1 -4.5 mV/°C
Q2 4.5
Q1 19 28 m
27 42
24 40
Q2 42 52
57 78
65 80
Q1 20
Q2 -20
Q1 25
Q2 10
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Q1
VDS = 15 V, VGS = 0 V, f = 1.0 MHz
Q2
Crss Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1.0 MHz
RG Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
575
528
145
132
65
70
2.1
6.0
pF
pF
pF
FDS8958A Rev F (W)


Features FDS8958A July 2003 FDS8958A Dual N & P -Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect tr ansistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailor ed to minimize on-state ressitance and yet maintain superior switching perform ance. These devices are well suited for low voltage and battery powered applic ations where low in-line power loss and fast switching are required. Features • Q1: N-Channel 7.0A, 30V RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V • Q2: P-Channel -5A, -3 0V RDS(on) = 0.052Ω @ VGS = -10V RDS( on) = 0.080Ω @ VGS = -4.5V • Fast s witching speed • High power and handl ing capability in a widely used surface mount package DD2 DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 G G1 S1 S S S Ab solute Maximum Ratings TA = 25°C unles s otherwise noted Symbol Parameter V DSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - .
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