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FDS8958A Dataheets PDF



Part Number FDS8958A
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Dual-Channel MOSFET
Datasheet FDS8958A DatasheetFDS8958A Datasheet (PDF)

FDS8958A April 2008 FDS8958A tm Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

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FDS8958A April 2008 FDS8958A tm Dual N & P-Channel PowerTrench® MOSFET General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • Q1: N-Channel 7.0A, 30V RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V • Q2: P-Channel -5A, -30V RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V • Fast switching speed • High power and handling capability in a widely used surface mount package DD2DD2 DD1 DD1 SO-8 Pin 1 SO-8 G2 S2 G SS1GS1 S Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD EAS TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1a) (Note 1c) Single Pulse Avalanche Energy (Note 3) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) Package Marking and Ordering Information Device Marking Device Reel Size FDS8958A FDS8958A 13” Q2 5 4 6 3 Q1 7 2 8 1 Q1 Q2 30 30 ±20 ±20 7 -5 20 -20 2 2 1.6 1.6 0.9 0.9 54 13 -55 to +150 78 40 Tape width 12mm Units V V A W mJ °C °C/W °C/W Quantity 2500 units ©2008 Fairchild Semiconductor Corporation FDS8958A Rev F3(W) FDS8958A Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage ∆BVDSS ∆TJ IDSS IGSSF Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward IGSSR Gate-Body Leakage, Reverse VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA ID = 250 µA, Referenced to 25°C ID = -250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V Q1 30 Q2 -30 Q1 25 Q2 -23 V mV/°C Q1 1 µA Q2 -1 All 100 nA All -100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current gFS Forward Transconductance VDS = VGS, VDS = VGS, ID = 250 µA ID = -250 µA ID = 250 µA, Referenced to 25°C ID = -250 µA, Referenced to 25°C VGS = 10 V, ID = 7 A VGS = 10 V, ID = 7 A, TJ = 125°C VGS = 4.5 V, ID = 6 A VGS = -10 V, ID = -5 A VGS = -10 V, ID = -5 A, TJ = 125°C VGS = -4.5 V, ID = -4 A VGS = 10 V, VDS = 5 V VGS = -10 V, VDS = -5 V VDS = 5 V, ID = 7 A VDS = -5 V, ID =-5 A Q1 1 1.9 3 V Q2 -1 -1.7 -3 Q1 -4.5 mV/°C Q2 4.5 Q1 19 28 mΩ 27 42 24 40 Q2 42 52 57 78 65 80 Q1 20 A Q2 -20 Q1 25 S Q2 10 Dynamic Characteristics Ciss Input Capacitance Q1 Q1 575 pF VDS = 15 V, VGS = 0 V, f = 1.0 MHz Q2 528 Coss Output Capacitance Q1 145 pF Q2 Q2 132 Crss Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1.0 MHz Q1 65 pF Q2 70 RG Gate Resistance VGS = 15 mV, f = 1.0 MHz Q1 2.1 Ω Q2 6.0 FDS8958A Rev F3 (W) FDS8958A Electrical Characteristics (continued) TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Switching Characteristics (Note 2) td(on) Turn-On Delay Time Q1 Q1 VDD = 15 V, ID = 1 A, Q2 tr Turn-On Rise Time VGS = 10V, RGEN = 6 Ω Q1 Q2 td(off) Turn-Off Delay Time Q2 Q1 VDD = -15 V, ID = -1 A, Q2 tf Turn-Off Fall Time VGS = -10V, RGEN = 6 Ω Q1 Q2 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Q1 Q1 VDS = 15 V, ID = 7 A, VGS = 10 V Q2 Q1 Q2 Q2 VDS = -15 V, ID = -5 A,VGS = -10 V Q1 Q2 Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current Q1 Q2 ISM Maximum Plused Drain-Source Diode Forward Current (Note 2) Q1 Q2 VSD Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A (Note 2) Q1 Voltage VGS = 0 V, IS = -1.3 A (Note 2) Q2 trr Diode Reverse Recovery Q1 Q1 Time IF = 7 A, diF/dt = 100 A/µs Q2 Qrr Diode Reverse Recovery Q2 Q1 Charge IF = -5 A, diF/dt = 100 A/µs Q2 8 16 ns 7 14 5 10 ns 13 24 23 37 ns 14 25 3 6 ns 9 17 11.4 16 nC 9.6 13 1.7 nC 2.2 2.1 nC 1.7 1.3 A -1.3 20 A -20 0.75 1.2 V -0.88 -1.2 19 nS 19 9 nC 6 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while.


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