P-Channel 2.5V Specified MOSFET
FDS9431A
September 1999
FDS9431A
P-Channel 2.5V Specified MOSFET
General Description
This P-Channel 2.5V specified MOS...
Description
FDS9431A
September 1999
FDS9431A
P-Channel 2.5V Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
Features
-3.5 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V RDS(ON) = 0.180 Ω @ VGS = -2.5 V.
Fast switching speed. High density cell design for extremely low RDS(ON). High power and current handling capability.
Applications
DC/DC converter Power management Load switch Battery protection
D D
D
D
5 6 7
4 3 2 1
SO-8
S
S
S
G
8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
T A=25oC unless otherwise noted
Parameter
Ratings
-20 ±8
(Note 1a)
Units
V V A W
-3.5 -18 2.5 1.2 1.0 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RqJA RqJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 25
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS9431A
1999 Fairchild Semiconductor Corporation
Device FDS9431A
Reel Size 13’’
Tape width 12mm
Quantity 2500 units
FDS9431A Rev. A2
FDS9431A
Electrical Characteristics
Symbol
BVDSS DBVDSS D TJ IDSS IGSSF IGSS...
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