FDT439N

FDT439N June 1999 FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance, and provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control. Features • • • 6.3 A, 30 V. RDS(on) = 0.045 Ω @ VGS = 4.5 V RDS(on) = 0.058 Ω @ VGS = 2.5 V Fast switching speed. High power and current handling capabitlity in a widely used surface mount package. Applications • • • DC/DC converter Load switch Motor driving D D D D S D SOT-223 S G D S G SOT-223 * (J23Z) G G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA = 25°C unless otherwise noted Parameter FDT439N 30 (Note 1a) Units V V A W ±8 6.3 20 3 1.3 1.1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 42 12 °C/W °C/W Package Marking and Ordering Information Device Marking FDT439N Device FDT439N Reel Size 1...