30V N-Channel MOSFET
FDD6296/FDU6296
March 2015
FDD6296/FDU6296
30V N-Channel Fast Switching PowerTrench® MOSFET
General Description
This ...
Description
FDD6296/FDU6296
March 2015
FDD6296/FDU6296
30V N-Channel Fast Switching PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Applications
DC/DC converter Power management
Features
50A, 30 V
RDS(ON) = 8.8 mΩ @ VGS = 10 V RDS(ON) = 11.3 mΩ @ VGS = 4.5 V
Low gate charge
Fast switching
High performance trench technology for extremely low RDS(ON)
D G
S DTO-P-2A5K2 (TO-252)
GDS
I-PAK (TO-251AA)
D
G S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS VGSS ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
Pulsed
(Note 1a)
Power Dissipation
@TC=25°C
(Note 3)
@TA=25°C
(Note 1a)
@TA=25°C
(Note 1b)
Operating and Storage Junction Temperature Range
Ratings
30 ± 20 50 15 100 52 3.8 1.6 –55 to +175
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
2.9
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
40
Thermal Resistance, Junction-to-Ambient (Note 1b)
96
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
FDD6296
FDD6296
D-PAK (TO-252)
13’’
FDU6296
FDU2696
I-PAK (TO-251)
Tube
Tape width 16mm N/A
Units
V A
W
°C °C/W
Quantity 2500 un...
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