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FDU6696 Dataheets PDF



Part Number FDU6696
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet FDU6696 DatasheetFDU6696 Datasheet (PDF)

FDD6696/FDU6696 December 2002 FDD6696/FDU6696 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 50A, 30 V RDS(ON) = 8.0 mΩ @ V GS = 10 V RDS(ON) = 10.7 mΩ @ V GS = 4.5 V • Low gate charge (17nC typical) • Fast switching • Hi.

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FDD6696/FDU6696 December 2002 FDD6696/FDU6696 30V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. Features • 50A, 30 V RDS(ON) = 8.0 mΩ @ V GS = 10 V RDS(ON) = 10.7 mΩ @ V GS = 4.5 V • Low gate charge (17nC typical) • Fast switching • High performance trench technology for extremely low RDS(ON) Applications • DC/DC converter • Motor drives D D G S I-PAK (TO-251AA) G D S G D-PAK TO-252 (TO-252) S T A=25oC unless otherwise noted Absolute Maximum Ratings Symbol V DSS V GSS ID Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C @TA =25°C Pulsed (Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b) Ratings 30 ± 16 50 13 100 52 3.8 1.6 –55 to +175 Unit s V A PD Power Dissipation @TC=25°C @TA =25°C @TA =25°C W TJ , TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics Rθ J C Rθ JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.9 40 96 °C/W Package Marking and Ordering Information Device Marking FDD6696 FDU6696 Device FDD6696 FDU6696 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13’’ Tube Tape width 12mm N/A Quantity 2500 units 75 © 2002 Fairchild Semiconductor Corporation FDD6696/FDU6696 Rev D (W) FDD6696/FDU6696 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions (Note 2) Min Typ Max Unit s mJ A Drain-Source Avalanche Ratings EAS IAS Drain-Source Avalanche Energy Drain-Source Avalanche Current Single Pulse, V DD = 15 V, ID=13A 165 13 Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS IGSSF V GS(th) ∆V GS(th) ∆TJ RDS(on) Drain–Source Breakdown V GS = 0 V, ID = 250 µA Voltage Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) 30 23 10 ± 100 1 2 –5 6.7 8.6 10.2 51 1715 410 180 3 V mV/°C µA nA V mV/°C mΩ V DS = 24 V, V GS =± 16 V, V GS = 0 V V DS = 0 V On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) V DS = V GS , ID = 250 µA ID = 250 µA, Referenced to 25°C V GS = 10 V, ID = 13 A V GS = 4.5 V, ID = 12 A V GS = 10 V, ID = 13 A, TJ =125°C V DS = 5 V, ID = 13 A V DS = 15 V, f = 1.0 MHz V GS = 0 V, 8.0 10.7 15.0 gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS V SD trr Qrr Notes: S pF pF pF Ω 23 9 43 31 24 ns ns ns ns nC nC nC 13 A V nS nC Dynamic Characteristics V GS = 15 mV, V DD = 15 V, V GS = 10 V, f = 1.0 MHz ID = 13 A, RGEN = 6 Ω 1.3 13 4 27 17 Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge V DS = 15V, V GS = 5 V ID = 13 A, 17 5 6 Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = 13 A Voltage Diode Reverse Recovery Time IF = 13 A, Diode Reverse Recovery Charge diF/dt = 100 A/µs (Note 2) 0.8 27 15 1.2 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while Rθ CA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µ s, Duty Cycle < 2.0% 3. Maximum current is calculated as: current limitation is 21A PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VG S = 10V. Package FDD6696/FDU6696 Rev. D (W) FDD6696/FDU6696 Typical Characteristics 100 VGS =10V 80 ID , DRAIN CURRENT (A) 6.0V 4.5V R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 5.0V 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 4.0V 4.5V 5.0V 6.0V 10V VGS = 3.5V 4.0V 60 3.5V 40 20 3.0V 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 0 20 40 60 80 100 ID , DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.022 R DS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 ID = 50A VGS = 10V ID = 25A 0.018 0.014 TA = 125 C 0.01 o T A = 25 C 0.006 o 0.002 -25 0 25 50 75 100 o 125 150 175 2 4 6 8 10 TJ , JUNCTION TEMPERATURE ( C) V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature 60 Figure 4. On-Resistance Variation with Gate-to-Source Voltage .


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