Document
FDD6696/FDU6696
December 2002
FDD6696/FDU6696
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Features
• 50A, 30 V RDS(ON) = 8.0 mΩ @ V GS = 10 V RDS(ON) = 10.7 mΩ @ V GS = 4.5 V
• Low gate charge (17nC typical) • Fast switching • High performance trench technology for extremely low RDS(ON)
Applications
• DC/DC converter • Motor drives
D
D G S
I-PAK (TO-251AA) G D S
G
D-PAK TO-252 (TO-252)
S
T A=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
V DSS V GSS ID
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25°C @TA =25°C Pulsed
(Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b)
Ratings
30 ± 16 50 13 100 52 3.8 1.6 –55 to +175
Unit s
V A
PD
Power Dissipation
@TC=25°C @TA =25°C @TA =25°C
W
TJ , TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
Rθ J C Rθ JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
2.9 40 96
°C/W
Package Marking and Ordering Information
Device Marking FDD6696 FDU6696 Device FDD6696 FDU6696 Package D-PAK (TO-252) I-PAK (TO-251) Reel Size 13’’ Tube Tape width 12mm N/A Quantity 2500 units 75
© 2002 Fairchild Semiconductor Corporation
FDD6696/FDU6696 Rev D (W)
FDD6696/FDU6696
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
(Note 2)
Min
Typ
Max
Unit s
mJ A
Drain-Source Avalanche Ratings
EAS IAS
Drain-Source Avalanche Energy Drain-Source Avalanche Current
Single Pulse, V DD = 15 V, ID=13A
165 13
Off Characteristics
BV DSS ∆BV DSS ∆TJ IDSS IGSSF V GS(th) ∆V GS(th) ∆TJ RDS(on) Drain–Source Breakdown V GS = 0 V, ID = 250 µA Voltage Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage
(Note 2)
30 23 10 ± 100 1 2 –5 6.7 8.6 10.2 51 1715 410 180 3
V mV/°C µA nA V mV/°C mΩ
V DS = 24 V, V GS =± 16 V,
V GS = 0 V V DS = 0 V
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
V DS = V GS , ID = 250 µA ID = 250 µA, Referenced to 25°C V GS = 10 V, ID = 13 A V GS = 4.5 V, ID = 12 A V GS = 10 V, ID = 13 A, TJ =125°C V DS = 5 V, ID = 13 A V DS = 15 V, f = 1.0 MHz V GS = 0 V,
8.0 10.7 15.0
gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS V SD trr Qrr
Notes:
S pF pF pF Ω 23 9 43 31 24 ns ns ns ns nC nC nC 13 A V nS nC
Dynamic Characteristics
V GS = 15 mV, V DD = 15 V, V GS = 10 V,
f = 1.0 MHz ID = 13 A, RGEN = 6 Ω
1.3 13 4 27 17
Switching Characteristics
Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
V DS = 15V, V GS = 5 V
ID = 13 A,
17 5 6
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = 13 A Voltage Diode Reverse Recovery Time IF = 13 A, Diode Reverse Recovery Charge diF/dt = 100 A/µs
(Note 2)
0.8 27 15
1.2
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while Rθ CA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µ s, Duty Cycle < 2.0% 3. Maximum current is calculated as: current limitation is 21A
PD R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VG S = 10V. Package
FDD6696/FDU6696 Rev. D (W)
FDD6696/FDU6696
Typical Characteristics
100 VGS =10V 80 ID , DRAIN CURRENT (A) 6.0V 4.5V R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 5.0V
2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 4.0V 4.5V 5.0V 6.0V 10V VGS = 3.5V
4.0V
60 3.5V
40
20 3.0V 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V)
0
20
40
60
80
100
ID , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage
0.022 R DS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 ID = 50A VGS = 10V
ID = 25A
0.018
0.014
TA = 125 C
0.01
o
T A = 25 C
0.006
o
0.002
-25
0
25
50
75
100
o
125
150
175
2
4
6
8
10
TJ , JUNCTION TEMPERATURE ( C)
V GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature
60
Figure 4. On-Resistance Variation with Gate-to-Source Voltage
.