N-Channel MOSFET
FDD8870 / FDU8870
September 2004
FDD8870 / FDU8870
N-Channel PowerTrench® MOSFET 30V, 160A, 3.9m Ω
General Description...
Description
FDD8870 / FDU8870
September 2004
FDD8870 / FDU8870
N-Channel PowerTrench® MOSFET 30V, 160A, 3.9m Ω
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(ON) and fast switching speed.
Features
r DS(ON) = 3.9m Ω , V GS = 10 V, ID = 35A r DS(ON) = 4.4m Ω , V GS = 4.5V, I D = 35A High performance trench technology for extremely low r DS(ON) Low gate charge
Applications
DC/DC converters
High power and current handling capability
D G S
I-PAK (TO-251AA) G D S
G
D
D-PAK TO-252 (TO-252)
S
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
Symbol V DSS V GS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (T C = 25 o C, V GS = 10V) (Note 1) ID Continuous (T C = 25 o C, V GS = 4.5V) (Note 1) Continuous (T amb = 25 o C, VGS = 10 V, with Rθ JA = 52 o C/W) Pulsed E AS PD TJ, T STG Single Pulse Avalanche Energy (Note 2) Power dissipation Derate above 25 o C Operating and Storage Temperature 160 150 21 Figure 4 690 160 1.07 -55 to 175 A A A A mJ W W/ o C
oC
Ratings 30 ± 20
Units V V
Thermal Characteristics
Rθ JC Rθ JA Rθ JA Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, TO-251 Thermal Resistance Junction to Ambient TO-252, 1in 2 copper pad area 0.94 100 52
o C/W o C/W o C/W
Package Markin...
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