FDU8878

FDD8878 / FDU8878 N-Channel PowerTrench® MOSFET March 2015 FDD8878 / FDU8878 N-Channel PowerTrench® MOSFET 30V, 40A, 15mΩ Features rDS(ON) = 15mΩ, VGS = 10V, ID = 35A rDS(ON) = 18.5mΩ, VGS = 4.5V, ID = 35A High performance trench technology for extremely low General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. rDS(ON) Low gate charge High power and current handling capability Application „ DC / DC Converters RoHS Compliant D G S D-PAK (TO-252) GDS I-PAK (TO-251AA) D G S ©2008 Fairchild Semiconductor Corporation FDD8878 / FDU8878 Rev.1.2 1 www.fairchildsemi.com FDD8878 / FDU8878 N-Channel PowerTrench® MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) (Note 1) Continuous (TC = 25oC, VGS = 4.5V) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W) Pulsed EAS Single Pulse Avalanche Energy (Note 2) Power dissipation PD Derate above 25oC TJ, TSTG Operating and Storage Temperature Ratings 30 ±20 40 36 11 Figure 4 25 40 0.27 -55 to 175 Units V V A A A A mJ W W/oC oC Thermal Characteristics RθJC RθJA RθJA Thermal Resistance Junction to Case TO-252, TO-251 Thermal Resistance Junction to ...