FDW2501NZ

FDW2501NZ March 2000 PRELIMINARY FDW2501NZ Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features 6 A, 20 V. RDS(ON) = 0.018 Ω @ V GS = 4.5V RDS(ON) = 0.028 Ω @ V GS = 2.5V Extended V GSS range (±12V) for battery applications. ESD protection diode (note 3). High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package Applications Load switch Motor drive DC/DC conversion Power management 1 2 3 4 8 7 6 5 Absolute Maximum Ratings Symbol V DSS V GSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation T A=25oC unless otherwise noted Parameter Ratings 20 ±12 (Note 1a) Units V V A W °C 6 30 1.0 0.6 -55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics Rθ JA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 125 208 °C/W Package Marking and Ordering Information Device Marking 2501NZ © 2000 Fairchild Semiconductor Corporation Device FDW2501NZ Reel Size 13’’ Tape width 12mm Quantity 3000 units FDW2501NZ Rev C(W) FDW2501NZ Electrical Characteristics Symbol BV DSS ∆BV DSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source B...