Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2503N
April 2000 PRELIMINARY
FDW2503N
Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This N-...
Description
FDW2503N
April 2000 PRELIMINARY
FDW2503N
Dual N-Channel 2.5V Specified PowerTrench MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V).
Features
5.5 A, 20 V. RDS(ON) = 0.021 Ω @ VGS = 4.5 V RDS(ON) = 0.035 Ω @ VGS = 2.5 V
Extended VGSS range (±12V) for battery applications Low gate charge High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package
Applications
Load switch Motor drive DC/DC conversion Power management
G2 S2 S2 D2 G1 S1 S1 D1
Pin 1
1 2 3 4
8 7 6 5
TSSOP-8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
20 ±12
(Note 1a)
Units
V V A W °C
5.5 30 1.0 0.6 -55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
125 208
°C/W
Package Marking and Ordering Information
Device Marking 2503N
2000 Fairchild Semiconductor Corporation
Device FDW2503N
Reel Size 13’’
Tape width 12mm
Quantity 3000 units
FDW2503N Rev D (W)
FDW2503N
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ===∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ===∆TJ RDS(on)
TA = 25...
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