Common Drain N-Channel 2.5V specified PowerTrench MOSFET
FDW2507NZ
March 2003
FDW2507NZ
Common Drain N-Channel 2.5V specified PowerTrench MOSFET
General Description
This mono...
Description
FDW2507NZ
March 2003
FDW2507NZ
Common Drain N-Channel 2.5V specified PowerTrench MOSFET
General Description
This monolithic common drain N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS(ON) @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package.
Features
7.5 A, 20 V RDS(ON) = 19 mΩ @ VGS = 4.5 V RDS(ON) = 23 mΩ @ VGS = 2.5 V
Isolated source and drain pins ESD protection diode (note 3) High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V Low profile TSSOP-8 package
Applications
Li-Ion Battery Pack
D D D D G2 S2 G1 S1
Pin 1
1 2 3 4
8 7 6 5
TSSOP-8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
20 ±12
(Note 1a)
Units
V V A W °C
7.5 30 1.6 1.1 –55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
77 114
°C/W °C/W
Package Marking and Ordering Information
Device Marking 2507NZ Device FDW2507NZ Reel Size 13’’ Tape width 12mm Quantity 3000 units
2003 Fairchild Semiconductor Corporation
FDW2507NZ Rev C2
FDW2507NZ
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR
TA = 25°C unl...
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