FDW252P

FDW252P June 2000 PRELIMINARY FDW252P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features –8.8 A, –20 V. RDS(ON) = 0.012 Ω @ VGS = –4.5 V RDS(ON) = 0.018 Ω @ VGS = –2.5 V Extended VGSS range (±12V) for battery applications Low gate charge High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package Applications Load switch Motor drive DC/DC conversion Power management D S S D G S S D Pin 1 5 6 7 8 4 3 2 1 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings -20 ± 12 (Note 1) Units V V A W °C -8.8 -50 1.3 0.6 -55 to +150 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 96 208 °C/W Package Marking and Ordering Information Device Marking 252P Device FDW252P Reel Size 13’’ Tape width 16mm Quantity 3000 units 2000 Fairchild Semiconductor Corporation FDW252P Rev. B(W) FDW252P Electrical Characteristics Symbol BVDSS ∆BVDSS ===∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ===∆TJ RDS(on) ID(on) gFS Ciss Coss Crss ...