P-Channel 1.8V Specified PowerTrench MOSFET
FDW254P
August 2000 PRELIMINARY
FDW254P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channe...
Description
FDW254P
August 2000 PRELIMINARY
FDW254P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (1.8V – 8V).
Features
–9.2 A, –20 V. RDS(ON) = 0.012 Ω @ VGS = –4.5 V RDS(ON) = 0.015 Ω @ VGS = –2.5 V RDS(ON) = 0.0215 Ω @ VGS = –1.8 V
Applications
Load switch Motor drive DC/DC conversion Power management
Rds ratings for use with 1.8 V logic Low gate charge High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package
D S S D G S S D
Pin 1
5 6 7 8
4 3 2 1
TSSOP-8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
-20 ±8
(Note 1)
Units
V V A W °C
-9.2 -50 1.3 0.6 -55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
(Note 1a) (Note 1b)
96 208
°C/W
Package Marking and Ordering Information
Device Marking 254P Device FDW254P Reel Size 13’’ Tape width 12mm Quantity 3000 units
2000 Fairchild Semiconductor Corporation
FDW254P Rev C (W)
FDW254P
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ===∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ===∆TJ RDS(on)
TA = 25...
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