FDW256P

FDW256P May 2001 FDW256P 30V P-Channel PowerTrench® MOSFET General Description This P -Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features –8 A, –30 V RDS(ON) = 13.5 mΩ @ V GS = –10 V RDS(ON) = 20 mΩ @ V GS = –4.5 V Extended V GSS range (±25V) for battery applications High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package Applications Battery protection DC/DC conversion Power management Load switch D S S D G S S D 5 6 7 8 4 3 2 1 TSSOP-8 Pin 1 Absolute Maximum Ratings Symbol V DSS V GSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous TA=25oC unless otherwise noted Parameter Ratings –30 ± 25 (Note 1) Units V V A W °C –8 –50 1.3 0.6 –55 to +150 – Pulsed Power Dissipation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics Rθ JA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 96 208 °C/W Package Marking and Ordering Information Device Marking 256P Device FDW256P Reel Size 13’’ Tape width 16mm Quantity 3000 units © 2001 Fairc hild Semiconductor Corporation FDW256P Rev C(W) FDW256P Electrical Characteristics Symbol BV DSS ∆BV DSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage ...