FDW6923

FDW6923 May 2002 FDW6923 P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the MOSFET, providing a compact power solution for asynchronous DC/DC converter applications. Features –3.5 A, –20 V. RDS(ON) = 0.045 Ω @ VGS = –4.5 V RDS(ON) = 0.075 Ω @ VGS = –2.5 V VF < 0.55 V @ 1 A High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package Applications DC/DC conversion A A A C G S S D 5 6 7 8 4 3 2 1 TSSOP-8 Pin 1 MOSFET Absolute Maximum Ratings Symbol VDSS VGSS ID TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1) Ratings –20 ± 12 Units V V A PD TJ, TSTG – Pulsed MOSFET Power Dissipation (minimum pad) (Note 1) Schottky Power Dissipation (minimum pad) (Note 1) Operating and Storage Junction Temperature Range –3.5 –30 1.2 1.0 -55 to +150 W °C Schottky Maximum Ratings VRRM IF IFM Repetitive Peak Reverse Voltage Average Forward Current Peak Forward Current 20 1.5 30 V A A Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (minimum pad) (Note 1) MOSFET: 115 Schottky: 130 °C/W Package Marking and Ordering Information Device Marking 6923 Device FDW6923 Reel Size 13’’ Tape width 16mm Quantity 3000 units 2002 Fairc...