Document
FDZ203N
March 2003
FDZ203N
N-Channel 2.5V Specified PowerTrench® BGA MOSFET
General Description
Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ203N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON).
Features
• 7.5 A, 20 V. RDS(ON) = 18 mΩ @ VGS = 4.5 RDS(ON) = 30 mΩ @ VGS = 2.5 V
• Occupies only 4 mm2 of PCB area. Less than 40% of the area of a SSOT-6 • Ultra-thin package: less than 0.80 mm height when mounted to PCB • Ultra-low Qg x RDS(ON) figure-of-merit. • High power and current handling capability.
Applications
• Battery management • Load switch • Battery protection
D
D S S
D
P in 1
S
F203N F203N
S G
S S
G
Bottom
Top
TA=25oC unless otherwise noted
D
Absolute Maximum Ratings
VDSS VGSS ID
Symbol
PD TJ, TSTG
Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range
Parameter
20 ±12 7.5 20 1.6 –55 to +150
Ratings
Units
V V A
W °C
Thermal Characteristics
RθJA RθJB RθJC
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1) (Note 1)
67 11 1
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking 203N Device FDZ203N Reel Size 7’’
Tape width 8mm
Quantity 3000 units
©2003 Fairchild Semiconductor Corporation
FDZ203N Rev. E2(W)
FDZ203N
Electrical Characteristics
Symbol
BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS Ciss Coss Crss
TA = 25° C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 12 V, VGS = –12 V, VGS = 0 V VDS = 0 V VDS = 0 V
Min
20
Typ
Max Units
V mV/°C 1 100 –100 µA nA nA V mV/°C mΩ A S pF pF pF 16 20 42 16 15 ns ns ns ns nC nC nC A V nS nC
Off Characteristics
14
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 4.5 V, ID = 7.5 A VGS = 2.5 V, ID = 5.5 A VGS = 4.5 V, ID = 7.5 A, TJ=125°C VGS = 4.5 V, VDS = 5 V VDS = 10 V, ID = 7.5 A VDS = 10 V, f = 1.0 MHz V GS = 0 V,
0.6
0.8 –3 14 20 20
1.5
18 30 28
20 33 1127 268 134 8 11 26 8 11 2 3
Dynamic Characteristic.