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FDZ203N Dataheets PDF



Part Number FDZ203N
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel 2.5V Specified PowerTrench BGA MOSFET
Datasheet FDZ203N DatasheetFDZ203N Datasheet (PDF)

FDZ203N March 2003 FDZ203N N-Channel 2.5V Specified PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ203N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features.

  FDZ203N   FDZ203N



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FDZ203N March 2003 FDZ203N N-Channel 2.5V Specified PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ203N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features • 7.5 A, 20 V. RDS(ON) = 18 mΩ @ VGS = 4.5 RDS(ON) = 30 mΩ @ VGS = 2.5 V • Occupies only 4 mm2 of PCB area. Less than 40% of the area of a SSOT-6 • Ultra-thin package: less than 0.80 mm height when mounted to PCB • Ultra-low Qg x RDS(ON) figure-of-merit. • High power and current handling capability. Applications • Battery management • Load switch • Battery protection D D S S D P in 1 S F203N F203N S G S S G Bottom Top TA=25oC unless otherwise noted D Absolute Maximum Ratings VDSS VGSS ID Symbol PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range Parameter 20 ±12 7.5 20 1.6 –55 to +150 Ratings Units V V A W °C Thermal Characteristics RθJA RθJB RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) 67 11 1 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking 203N Device FDZ203N Reel Size 7’’ Tape width 8mm Quantity 3000 units ©2003 Fairchild Semiconductor Corporation FDZ203N Rev. E2(W) FDZ203N Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS Ciss Coss Crss TA = 25° C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 12 V, VGS = –12 V, VGS = 0 V VDS = 0 V VDS = 0 V Min 20 Typ Max Units V mV/°C 1 100 –100 µA nA nA V mV/°C mΩ A S pF pF pF 16 20 42 16 15 ns ns ns ns nC nC nC A V nS nC Off Characteristics 14 On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 4.5 V, ID = 7.5 A VGS = 2.5 V, ID = 5.5 A VGS = 4.5 V, ID = 7.5 A, TJ=125°C VGS = 4.5 V, VDS = 5 V VDS = 10 V, ID = 7.5 A VDS = 10 V, f = 1.0 MHz V GS = 0 V, 0.6 0.8 –3 14 20 20 1.5 18 30 28 20 33 1127 268 134 8 11 26 8 11 2 3 Dynamic Characteristic.


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