FDZ208P

FDZ208P January 2003 FDZ208P P-Channel 30 Volt PowerTrench   BGA MOSFET Features –12.5 A, –30 V. RDS(ON) = 10.5 mΩ @ VGS = –10 V RDS(ON) = 16.5 mΩ @ VGS = –4.5 V Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 Ultra-thin package: less than 0.80 mm height when mounted to PCB 3.5 x 4 mm2 footprint High power and current handling capability General Description Combining Fairchild’s advanced 30 Volt P-Channel Trench II Process with ± 25 Volts Vgs. Abs. Max Gate Rating for the ultimate low Rds Battery Protection MOSFET. This MOSFET also embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Applications Battery management Load switch Battery protection D D D D D S S S G D S S S S D S S S S D S S S S D D D D D Pin 1 S F208P G Pin 1 D D Bottom Top TA=25oC unless otherwise noted Absolute Maximum Ratings VDSS VGSS ID PD TJ, Tstg Symbol Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation (Steady State) Parameter (Note 1a) (Note 1a) (Note 1a) Operating and Storage Junction Temperature Range –30 ± 25 –12.5 –60 2.2 1.0 –55 to +150 Ratings Units V V A W °C Thermal Characteristics RθJA RθJB RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (No...