FDZ298N

FDZ298N February 2004 FDZ298N N-Channel 2.5 V Specified PowerTrench® BGA MOSFET General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ298N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON). Features 6 A, 20 V RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 mΩ @ VGS = 2.5 V Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 Ultra-thin package: less than 0.80 mm height when mounted to PCB Outstanding thermal transfer characteristics: 4 times better than SSOT-6 Ultra-low Qg x RDS(ON) figure-of-merit High power and current handling capability. Applications Battery management Battery protection D D S S D P in 1 D C S G S S G Bottom Top TA=25oC unless otherwise noted S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Parameter Ratings 20 ±12 (Note 1a) Units V V A W °C 6 10 1.7 –55 to +150 Power Dissipation for Single Operation (Note 1a) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 72 °C/W Package Marking and Ordering Information Device Marking C Device FDZ29...