FFAF10U170S

FFAF10U170S FFAF10U170S Features High voltage and high reliability High speed switching Low forward voltage Applications Suitable for damper diode in horizontal deflection circuits 1 2 TO-3PF 1. Cathode 2. Anode DAMPER DIODE Absolute Maximum Ratings Symbol VRRM IF(AV) IFSM TJ, TSTG TC=25°C unless otherwise noted Value 1700 @ TC = 125°C 10 100 - 65 to +150 Units V A A °C Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case TC=25 °C unless otherwise noted Min. TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C Typ. Max. 2.2 2.0 mA 0.1 10 140 400 13 ns ns V Units V Value 1.5 Units °C/W Electrical Characteristics Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 10A IF = 10A Maximum Instantaneous Reverse Current @ rated VR Maximum Reverse Recovery Time (IF =1A, di/dt = 50A/µs) Maximum Forward Recovery Time (IF =6.5A, di/dt = 50A/µs) Maximum Forward Recovery Voltage IRM * trr tfr VFRM * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2001 Fairchild Semiconductor Corporation Rev. A, June 2001 FFAF10U170S Typical Characteristics 10000 100 Forward Current , IF [A] TJ = 125 C 10 o R [µA] 1000 TJ = 125 C o Reverse Current , I 100 TJ = 25 C 1 o 10 TJ = 100 C o 1 0.1 TJ = 25 C 0.1 0 1 2 3 4 5 o 0.001 0 300 600 900 1200 15...