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FFAF10U20DN

Fairchild Semiconductor

ULTRA FAST RECOVERY POWER RECTIFIER

FFAF10U20DN FFAF10U20DN Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switc...


Fairchild Semiconductor

FFAF10U20DN

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Description
FFAF10U20DN FFAF10U20DN Features Ultrafast with soft recovery Low forward voltage Applications Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220F TO-3PF 1 2 3 1. Anode 2.Cathode 3. Anode ULTRA FAST RECOVERY POWER RECTIFIER Absolute Maximum Ratings (per diode) TC=25°C unless otherwise noted Symbol VRRM IF(AV) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current @ TC = 100°C Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 200 10 100 - 65 to +150 Units V A A °C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case Value 4.0 Units °C/W Electrical Characteristics (per diode) TC=25 °C unless otherwise noted Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 10A IF = 10A Maximum Instantaneous Reverse Current @ rated VR Maximum Reverse Recovery Time Maximum Reverse Recovery Current Maximum Reverse Recovery Charge (IF =10A, di/dt = 200A/µs) Avalanche Energy Min. TC = 25 °C TC = 100 °C TC = 25 °C TC = 100 °C 0.5 Typ. Max. 1.2 1.0 µA 10 100 35 2.5 45 ns A nC mJ Units V IRM * trr Irr Qrr WAVL * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2001 Fairchild Semiconductor Corporation Rev. A, December 2001 FFAF10U20DN Typical Characteristics 50 1000 [µA] 100 Forward Current , IF [A] 10 TC = 100 C TC = 25 C o o TC = 100 C 10 o Reverse Current , I R 1 TC = 25 C 0...




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