FFB3946 / FMB3946
FFB3946
E2 B2 C1
TRANSISTOR TYPE C1 B1 E1 C2 B2 E2 NPN PNP
FMB3946
C2 E1 C1
SC70-6
Mark: .AB
Dot de...
FFB3946 / FMB3946
FFB3946
E2 B2 C1
TRANSISTOR TYPE C1 B1 E1 C2 B2 E2
NPN PNP
FMB3946
C2 E1 C1
SC70-6
Mark: .AB
Dot denotes pin #1 pin #1
C2 B1 E1 B2
SuperSOT-6
Mark: .002
Dot denotes pin #1
E2
pin #1 B1
NPN &
PNP General Purpose Amplifier
This complementary device is designed for use as a general purpose amplifier and switch The useful dynamic range extends to 100 mA as a switch and 100 MHz as an amplifier. Sourced from Process 23 and 66. See FFB3904 (
NPN) and FFB3906 (
PNP) for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage
TA = 25°C unless otherwise noted
Parameter
Value
40 40 5.0 200 -55 to +150
Units
V V V mA °C
4
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for
PNP transistors.
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient FFB3946 300 2.4 415
Max
FMB3946 700 5.6 180
Units
mW mW/°C °C/W
1999 Fairchild Semiconductor Co...