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FFB3946

Fairchild Semiconductor

NPN & PNP General Purpose Amplifier

FFB3946 / FMB3946 FFB3946 E2 B2 C1 TRANSISTOR TYPE C1 B1 E1 C2 B2 E2 NPN PNP FMB3946 C2 E1 C1 SC70-6 Mark: .AB Dot de...


Fairchild Semiconductor

FFB3946

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Description
FFB3946 / FMB3946 FFB3946 E2 B2 C1 TRANSISTOR TYPE C1 B1 E1 C2 B2 E2 NPN PNP FMB3946 C2 E1 C1 SC70-6 Mark: .AB Dot denotes pin #1 pin #1 C2 B1 E1 B2 SuperSOT-6 Mark: .002 Dot denotes pin #1 E2 pin #1 B1 NPN & PNP General Purpose Amplifier This complementary device is designed for use as a general purpose amplifier and switch The useful dynamic range extends to 100 mA as a switch and 100 MHz as an amplifier. Sourced from Process 23 and 66. See FFB3904 (NPN) and FFB3906 (PNP) for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage TA = 25°C unless otherwise noted Parameter Value 40 40 5.0 200 -55 to +150 Units V V V mA °C 4 Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient FFB3946 300 2.4 415 Max FMB3946 700 5.6 180 Units mW mW/°C °C/W  1999 Fairchild Semiconductor Co...




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