Document
LESHAN RADIO COMPANY, LTD.
FFM101 – FFM107
1A 1A FAST RECOVERY SMA DIODES
TYPE Marking VRRM(V)
IF (A)
FFM101 FF1 FFM102 FF2 FFM103 FF3 FFM104 FF4 FFM105 FF5 FFM106 FF6 FFM107 FF7
50 100 200 400 600 800 1000
1.0
VF(V) 1.3
Trr I F =1A, I R = 0.5A, I RR = 0.25A Trr Test Conditions: I F = 1A, I R= 0.5A, I RR = 0.25A
IRMI(µA) 5.0
IP8M(A) 30
Trr(ns)
150
250 500
BA
G E
HF
D
C
A
.110(2.8) .086(2.2)
B
.067(1.7) .051(1.3)
C
.008 MAX (.2)
D
.091(2.3) .067(1.7)
E
.051(1.3) .008(0.2)
F
.059(1.5) .035(0.9)
G
.209(5.3) .185(4.7)
Package Dimensions DO – 214AC
H
.059(1.5) .035(0.9)
DO – 214AC
49A–1/2
INSTANTANEOUS FORWARD CURRENT, (A) AVERAGE FORWARD CURRENT,(A)
LESHAN RADIO COMPANY, LTD.
FFM101 – FFM107 1A RATING & CHARACTERISTIC CURVES OF 1A FAST RECOVERY SMA DIODES
FIG.1–TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
FIG. 2 – TYPICAL FORWARD CURRENT DERATING CURVE
50 Ω NONINDUCTIVE
10 Ω NONINDUCTIVE
+0.5A
Trr
1.25
Single Phase Half Wave 60Hz 1.00 Resistive or
Inductive Load
(+) 25Vdc (APPROX)
(-)
D.U.T. 1Ω
OSCILLOSCOPE
(-)
PULSE G E N E R ATO R
(NOTE 2)
0 -0.25A
0.75 0.50
NON. INDUCTIVE
(NOTE 1)
(+)
0.25
NOTES:1.Rise Time=7ns max. Input Impedance=1megohm.22pF.
2.Rise Time=10ns max. Source Impedance=50 ohms.
-1.0A
1cm SET TIME
BASE FOR 50/100ns/cm
0 25 50 75 100 125 150 175
AMBIENT TEMPER ATURE, (ºC)
FIG. 3 – TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
100
10 TJ =25ºC
PEAK FORWARD SURGE CURRENT,(A)
1.0
Pulse Width=300µs 1% Duty Cycle 0 .4 .6 .8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,(V)
FIG. 4 – MAXINUM NON-REPETITIVE FOWARD SURGE CURRENT
50
8.3ms Single Half Sine-Wave (JEDEC Method) 40
30
20
10
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
JUNCTION CAPACITANCE,(pF)
FIG. 5 – TYPICAL JUNCTION CAPACITANCE
200 100
60 40
20 10
6 4
2
1 .1 .2
.4
TJ =25ºC
1.0 2 4
10 20
REVERSE VOLTAGE,(V)
40
100
49A–2/2
.