F05B23VR

SHINDENGEN VR Series Power MOSFET N-Channel Enhancement type F05B23VR 230V 0.5A FEATURES ●Applicable to 4V drive. ●The static Rds(on) is small. ●Built-in ZD for Gate Protection. OUTLINE DIMENSIONS Case : B-pack (Unit : mm) APPLICATION ●DC/DC converters ●Power supplies of DC 12-24V input ●Product related to Integrated Service Digital Network RATINGS ●Absolute Maximum Ratings （Tc = 25℃） Item Symbol Conditions Storage Temperature Tstg Channel Temperature Tch Drain-Source Voltage VDSS Gate-Source Voltage VGSS Continuous Drain Current（DC） ID IDP Continuous Drain Current（Peak) IS Continuous Source Current（DC） □ PT On alumina substrate, 50.8mm , substrate thickness 0.64t, Ta = 25℃ Total Power Dissipation Ratings Unit -55～150 ℃ 150 230 V ±20 0.5 1 A 0.5 1.5 W 3.5 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd VR Series Power MOSFET ●Electrical Characteristics Tc = 25℃ Item Symbol V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Forward Tranｓconductance gfs Static Drain-Source On-ｓtate Resistance RDS(ON) Gate Threshold Voltage VTH VSD Source-Drain Diode Forward Voltage θja Thermal Resistance θjc Total Gate Charge Qg Input Capacitance Ciss Reverse Transfer Capacitance Crss Output Capacitance Coss ton Turn-On Time toff Turn-Off Time Conditions ID = 250μA, VGS = 0V VDS = 230V, VGS = 0V VGS = ±20V, VDS = 0V ID = 0.5A, VDS = 10V ID = 0.5A, VGS = 10V ID = 0.2mA, VDS = 10V IS = 0.5A, VGS = 0V junction to ambient, on a...