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F1020 Dataheets PDF



Part Number F1020
Manufacturers Polyfet RF Devices
Logo Polyfet RF Devices
Description RF POWER VDMOS TRANSISTOR
Datasheet F1020 DatasheetF1020 Datasheet (PDF)

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 390 Watts Junction to Case Thermal Resistance 0.45 o C/W Maximum Junction Temperature 20.

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