F1108

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F t enhance broadband performance TM F1108 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 80 Watts Gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 170 Watts Junction to Case Thermal Resistance 0.95 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V o -65 o C to 150o C 8 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Pow er Gain Drain Efficiency Load Mismatch Tolerance MIN 11 55 TYP 80WATTS OUTPUT ) MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz η VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdow n Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forw ard Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Cap...