F1240

polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F t enhance broadband performance TM F1240 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 40 Watts Single Ended Package Style AT HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 120 Watts Junction to Case Thermal Resistance 1.5 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 30V o -65 o C to 150o C 6 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Pow er Gain Drain Efficiency Load Mismatch Tolerance MIN 10 60 TYP 40WATTS OUTPUT ) MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 1.2 A, Vds = 12.5 V, F = 175 MHz Idq = 1.2 A, Vds = 12.5 V, F = 175 MHz Idq = 1.2 A, Vds = 12.5 V, F = 175 MHz η VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdow n Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forw ard Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedbac...