FA01215

MITSUBISHI SEMICONDUCTOR GaAs FET FA01215 GaAs FET HYBRID IC DESCRIPTION FA01215 is RF Hybrid IC designed for 900MHz band small size handheld radio. 0.6 2 3.5 14.7 14.2 2 3.5 2 Unit:mm FEATURES Low voltage High gain High efficiency High power 3.0V 24dB(typ.) 50% 34.5dBm 6 APPLICATION GSM IV 1 2 3 4 5 2.25 2.5 2.5 2.5 2.5 1.95 0.25±0.1 1 2 3 0.5±0.15 4 5 6 RF INPUT VG1,2 VD1 VD2 RF OUTPUT GND(FIN) ABSOLUTE MAXIMUM RATINGS Symbol VD Pin TC(op) Tstg Parameter Drain voltage Input power Operation case temperature. Storage temperature. Condition PO≤34.5dBm ZG=ZL=50Ω Ta 25˚C 25˚C – – Ratings 4.5 15 -20 to +85 -30 to +90 Unit V dBm ˚C ˚C Note: Each maximum ratings is guaranteed independently and P.W.=580µs,duty=1/8 operation. ELECTRICAL CHARACTERISTICS (Ta=25˚C) Symbol f PO ht Igt rin 2fo,3fo OSC.T VSWR.T Parameter Frequency Output power Total efficiency Total gate current Return loss 2nd harmonics, 3rd harmonics Stability Load VSWR tolerance Test conditions Limits Min Typ Max – 890 915 – 34.5 – 50 – – -3 – 0 – – -6 – – -30 – – -60 No degradation or destroy Unit MHz dBm % mA dB dBc dBc – Note1 Note2 Note3 Note4 Note5 Note1: Pin=13dBm,VD1=VD2=3.0V(Pulse: P.W.=580µs,duty=1/8),VG1,2=-2.0V,ZG=ZL=50Ω Note2: PO=34.5dBm(Pin controlled),VD1=VD2=3.0V(Pulse: P.W.=580µs,duty=1/8),VG1,2=-2.0V,ZG=ZL=50Ω Note3: PO=34.5dBm(Pin controlled),VD1=VD2=3.0V(DC),VG1,2=-2.0V,ZG=ZL=50Ω Note4: PO=0~34.5dBm(Pin controlled),VD1=VD2=3.0V(DC),VG1,2=-2.0V,ρL=3:1(all phase),ZG=50Ω ...