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FA01219A Dataheets PDF



Part Number FA01219A
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description GaAs FET HYBRID IC
Datasheet FA01219A DatasheetFA01219A Datasheet (PDF)

MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION FA01219A is RF Hybrid IC designed for 0.8GHz band small size handheld radio. 1 Unit:mm GND 8 FEATURES • Low voltage • High gain • High efficiency • High power 3.5V 22.5B 50% 30.5dBm 2 7 3 6 4 5 APPLICATION PDC0.8GHz GND 10.0 0.8 2.0 6.0 1 RF INPUT 2 VD1 3 4 5 6 GND VD2 RF OUTPUT GND 7 GND 8 VG1,2 tolerance:±0.2 ABSOLUTE MAXIMUM RATINGS Symbol VD Pin TC(op) Tstg Parameter Drain voltage Input power Operation.

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