FA01220A

MITSUBISHI SEMICONDUCTOR GaAs FET FA01220A GaAs FET HYBRID IC DESCRIPTION FA01220A is RF Hybrid IC designed for 1.5GHz band small size handheld radio. 1 GND 8 7 6 Unit:mm FEATURES Low voltage High gain High efficiency High power 3.5V 20.5B 50% 30.5dBm 2 3 4 5 GND 10.0 APPLICATION PDC1.5GHz 0.8 2.0 6.0 1 RF INPUT 2 VD1 3 GND 4 VD2 5 RF OUTPUT 6 GND 7 GND 8 VG1,2 tolerance:±0.2 ABSOLUTE MAXIMUM RATINGS Symbol VD Pin TC(op) Tstg Parameter Drain voltage Input power Operating case temp Storage temp Condition Tc=25˚C, Po≤30.5dBm Tc=25˚C, ZG=ZL=50Ω Ratings 4.5 15 -20 to +85 -30 to +90 Unit V dBm ˚C ˚C Note: Each maximum ratings is guaranteed independently and duty=1/3 operation. T=20 msec ELECTRICAL CHARACTERISTICS(Ta=25˚C) Symbol f Pin IDt ρin ACP50 ACP100 2fo 3fo Parameter Frequency Input power Total drain current Return loss ±50kHz adjacent channel power ±100kHz adjacent channel power 2nd harmonics 3rd harmonics Test conditions Min 1429 – – – – – – – Limits Typ – (7) 640 – – – – – Max 1453 10 720 -6 -47 -62 -30 -30 Unit MHz dBm mA dB dBc dBc dBc dBc PO=30.5dBm VD1=VD2=3.5V VG1,2=-2.5V ZG=ZL=50Ω (π/4DQPSK) Ditto (CW) Nov. ´97 MITSUBISHI SEMICONDUCTOR GaAs FET FA01220A GaAs FET HYBRID IC TYPICAL CHARACTERISTICS 1 PO,ACP vs Pin 35 VG=-2.5V VD=3.5V f=1441MHz PO ACP-50K 25 -50 25 -30 35 VG=-2.5V VD=3.5V f=1441MHz PO 700 IDt 600 500 20 ACP-100K 15 -5 0 5 10 -70 15 15 -5 0 5 10 -60 20 400 300 200 15 PO,IDt vs Pin 1000 900 800 30 -40 30 Pin(dBm) Pin(dBm) ...