Document
DATA SHEET
SILICON TRANSISTOR
FA1A4M
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD
FEATURES
• Resistors Built-in TYPE
C B R1 E
2.9±0.2
PACKAGE DIMENSIONS
in millimeters
2.8±0.2 0.4+0.1 –0.05 1.5 0.65+0.1 –0.15
R2
0.95 0.95
2 3
• Complementary to FN1A4M
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation (TA = 25 ˚C) Junction temperature Storage Temperature Range VCBO VCEO VEBO IC IC PT TJ Tstg 60 50 10 100 200 200 150 –55 to +150 V V V mA mA mW ˚ C ˚ C
Marking : L33 Marking 0.3 1.1 to 1.4 0.16+0.1 –0.06 0 to 0.1 Electrode Connection 1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Collector Cutoff Current DC Current Gain DC Current Gain Collector Saturation Voltage Low-Level Input Voltage High-Level Input Voltage Input Resistor Resistor Ratio Turn-on Time Storage Time Turn-off Time SYMBOL ICBO hFE1* hFE2* VCE(sat)* VIL* VIH* R1 R1/R2 ton tstg toff 3.0 7.0 0.9 35 80 62 230 0.05 1.08 1.4 10 1.0 0.06 2.0 2.15 13 1.1 0.2 5.0 6.0 0.2 0.8 V V V kΩ MIN. TYP. MAX. 100 100 UNIT nA TEST CONDITIONS VCB = 50 V, IE = 0 VCE = 5.0 V, IC = 5.0 mA VCE = 5.0 V, IC = 50 mA IC = 5.0 mA, IB = 0.25 mA VCE = 5.0, IC = 100 µA VCE = 0.2 V, IC = 5.0 mA
µs µs µs
VCC = 5 V, Vin = 5 V R L = 1 kΩ PW = 2 µs, Duty Cycle ≤ 2 %
* Pulsed: PW = 350 µs, Duty Cycle = 2 %
Document No. D10215EJ3V0DS00 (3rd edition) (Previous No. TC-1654) Date Published October 1995 P Printed in Japan
0.4+0.1 –0.05
1
©
1985
FA1A4M
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
250
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
50
Free air
PT – Total Power Dissipation – mW
220 µ
A
200 µ A
200
IC – Collector Current – mA
40
180 µ A
30
150
160 µ A
140 µ A
100
20
120 µ A
50
10 0 50 100 150 200 250 0 2
100 µ A
IB = 80 µ A 4 6 8 10
TA – Ambient Temperature – ˚C
VCE – Collector to Emitter Voltage – V
COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT
1.0 500
DC CURRENT GAIN vs. COLLECTOR CURRENT
VCE = 5.0 V
VCE – Collector to Emitter Voltage – V
0.8
200
TA =
75
˚C
hFE – DC Current Gain
100 50
25 ˚C
–25
˚C
0.6 Vin = 5 V 0.4 10 V
20 10 5 1.0
0.2
0
20
40
60
80
100
2.0
5.0
10
20
50
100
IC – Collector Current – mA
IC – Collector Current – mA
COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT
2.0 50 IC = 10·IB 1.0 20 0.5 TA = 75 ˚C 25 ˚C –25 ˚C
INPUT VOLTAGE vs. COLLECTOR CURRENT
VCE(sat) – Collector Saturation Voltage – V
Vin – Input Voltage – V
10 0.2 V 5.0
0.2 0.1 0.05
2.0 1.0
VCE = 5.0 V
–25 ˚C
25 ˚C
TA = 75 ˚C
2.0 5.0 10 20 50 100
0.02 1.0
2.0
5.0
10
20
50
100
0.5 1.0
IC – Collector Current – mA
IC – Collector Current – mA
2
FA1A4M
COLLECTOR CURRENT vs. INPUT VOLTAGE
1000 VCE = 5.0 V 16 100 R1 – Resistor – kΩ TA = 75 ˚C 20
RESISTOR vs. AMBIENT TEMPERATURE
IC – Collector Current – µA
25 ˚C
–25 ˚C
12
8
10
4
1.0
0.4
0.6
0.8
1.0
1.2
1.4
–25
0
25
50
75
100
Vin – Input Voltage – V
TA – Ambient Temperature – ˚C
SWITCHING TIME vs. COLLECTOR CURRENT
5.0 Vin = 5 V VCC = 5 V PW = 2 µs Duty Cycle ≤ 2 %
2.0 t – Swiching Time – µ s 1.0 0.5
tstg
tf 0.2 0.1 0.05 1.0 ton
2.0
5.0
10
20
50
100
IC – Collector Current – mA
REFERENCE
Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 IEI-1207 MEI-1202 MF-1134
3
FA1A4M
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application.