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ES1B Dataheets PDF



Part Number ES1B
Manufacturers NXP
Logo NXP
Description SMA ultra fast low-loss controlled avalanche rectifiers
Datasheet ES1B DatasheetES1B Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 ES1 series SMA ultra fast low-loss controlled avalanche rectifiers Product specification 2000 Feb 14 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Ideal for surface mount automotive applications • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • UL 94V-O classified plast.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 ES1 series SMA ultra fast low-loss controlled avalanche rectifiers Product specification 2000 Feb 14 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Ideal for surface mount automotive applications • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • UL 94V-O classified plastic package • Shipped in 12 mm embossed tape • Marking: cathode, date code, type code • Easy pick and place. olumns ES1 series DESCRIPTION DO-214AC surface mountable package with glass passivated chip. The well-defined void-free case is of a transfer-moulded thermo-setting plastic. The small rectangular package has two J bent leads. cathode band k a Top view Side view MSA474 Fig.1 Simplified outline (DO-214AC) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM ES1A ES1B ES1C ES1D VR continuous reverse voltage ES1A ES1B ES1C ES1D VRMS root mean square voltage ES1A ES1B ES1C ES1D IF(AV) IFSM average forward current non-repetitive peak forward current averaged over any 20 ms period; Ttp = 120 °C; see Fig.2 t = 8.3 ms half sine wave; Tj = 25 °C prior to surge; VR = VRRMmax See Fig.3 − − − − − − 35 70 105 140 1 25 V V V V A A − − − − 50 100 150 200 V V V V PARAMETER repetitive peak reverse voltage − − − − 50 100 150 200 V V V V CONDITIONS MIN. MAX. UNIT Tstg Tj storage temperature junction temperature −65 −65 +175 +175 °C °C 2000 Feb 14 2 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR trr Cd PARAMETER forward voltage reverse current reverse recovery time diode capacitance CONDITIONS IF = 1 A; see Fig.4 VR = VRRMmax; see Fig.5 VR = VRRMmax; Tj = 165 °C; see Fig.5 − − − TYP. ES1 series MAX. 1.1 5 100 25 − V UNIT µA µA ns pF when switched from IF = 0.5 A to IR = 1 A; − measured at IR = 0.25 A; see Fig.9 VR = 4 V; f = 1 MHz; see Fig.6 19 THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point; see Fig.7 thermal resistance from junction to ambient note 1 note 2 Notes 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm. For more information please refer to the ‘General Part of associated Handbook’. CONDITIONS VALUE 27 100 150 UNIT K/W K/W K/W 2000 Feb 14 3 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers GRAPHICAL DATA MCD821 ES1 series handbook, halfpage 2 handbook, halfpage 200 MBK455 IF(AV) (A) 1.5 Tj (°C) 1 100 0.5 0 0 40 80 120 160 200 Ttp (°C) 0 0 50 VR (%VRmax) 100 VR = VRRMmax; δ = 0.5; a = 1.57. Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). Device mounted as shown in Fig.8. Solid line: Al2O3 printed-circuit board. Dotted line: epoxy printed-circuit board. Fig.3 Maximum permissible junction temperature as a function of reverse voltage. 102 handbook, halfpage IF (A) MCD790 102 handbook, halfpage IR (µA) Tj = 165 °C MCD804 10 10 1 1 10−1 10−1 10−2 10−2 Tj = 25 °C 10−3 0 1 2 VF (V) 3 10−3 0 20 40 60 80 100 VR (%VRmax) Tj = 25 °C. Fig.4 Forward current as a function of forward voltage; typical values. Fig.5 Reverse current as a function of reverse voltage; typical values. 2000 Feb 14 4 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers ES1 series 102 handbook, halfpage MCD799 102 handbook, halfpage MBL120 Cd (pF) Zth j-tp (K/W) 10 10 1 10−2 10−1 1 10 VR (V) 102 1 1 10 102 103 tp (ms) 104 f = 1 MHz; Tj = 25 °C. Fig.6 Diode capacitance as a function of reverse voltage; typical values. Fig.7 Transient thermal impedance as a function of pulse width. 50 4.5 50 2.5 1.25 MSB213 Dimensions in mm. Material: Al2O3 or epoxy-glass. Fig.8 Printed-circuit board for surface mounting. 2000 Feb 14 5 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers ES1 series handbook, full pagewidth DUT + IF (A) 0.5 1Ω t rr 10 Ω 25 V 50 Ω 0 0.25 0.5 IR (A) 1.0 t MAM057 Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns. Fig.9 Test circuit and reverse recovery time waveform and definition. 2000 Feb 14 6 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers PACKAGE OUTLINE Transfer-moulded thermo-setting plastic small rectangular surface mounted package; 2 connectors ES1 series SOD124 H D A A1 c Q E b (1) 0 2.5 scale 5 mm DIMENSIONS (mm are the .


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