Document
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D168
ES1 series SMA ultra fast low-loss controlled avalanche rectifiers
Product specification 2000 Feb 14
Philips Semiconductors
Product specification
SMA ultra fast low-loss controlled avalanche rectifiers
FEATURES • Glass passivated • High maximum operating temperature • Ideal for surface mount automotive applications • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • UL 94V-O classified plastic package • Shipped in 12 mm embossed tape • Marking: cathode, date code, type code • Easy pick and place.
olumns
ES1 series
DESCRIPTION DO-214AC surface mountable package with glass passivated chip. The well-defined void-free case is of a transfer-moulded thermo-setting plastic. The small rectangular package has two J bent leads.
cathode band k a
Top view
Side view
MSA474
Fig.1 Simplified outline (DO-214AC) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM ES1A ES1B ES1C ES1D VR continuous reverse voltage ES1A ES1B ES1C ES1D VRMS root mean square voltage ES1A ES1B ES1C ES1D IF(AV) IFSM average forward current non-repetitive peak forward current averaged over any 20 ms period; Ttp = 120 °C; see Fig.2 t = 8.3 ms half sine wave; Tj = 25 °C prior to surge; VR = VRRMmax See Fig.3 − − − − − − 35 70 105 140 1 25 V V V V A A − − − − 50 100 150 200 V V V V PARAMETER repetitive peak reverse voltage − − − − 50 100 150 200 V V V V CONDITIONS MIN. MAX. UNIT
Tstg Tj
storage temperature junction temperature
−65 −65
+175 +175
°C °C
2000 Feb 14
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Philips Semiconductors
Product specification
SMA ultra fast low-loss controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR trr Cd PARAMETER forward voltage reverse current reverse recovery time diode capacitance CONDITIONS IF = 1 A; see Fig.4 VR = VRRMmax; see Fig.5 VR = VRRMmax; Tj = 165 °C; see Fig.5 − − − TYP.
ES1 series
MAX. 1.1 5 100 25 − V
UNIT µA µA ns pF
when switched from IF = 0.5 A to IR = 1 A; − measured at IR = 0.25 A; see Fig.9 VR = 4 V; f = 1 MHz; see Fig.6 19
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point; see Fig.7 thermal resistance from junction to ambient note 1 note 2 Notes 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm. 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm. For more information please refer to the ‘General Part of associated Handbook’. CONDITIONS VALUE 27 100 150 UNIT K/W K/W K/W
2000 Feb 14
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Philips Semiconductors
Product specification
SMA ultra fast low-loss controlled avalanche rectifiers
GRAPHICAL DATA
MCD821
ES1 series
handbook, halfpage
2
handbook, halfpage
200
MBK455
IF(AV) (A) 1.5 Tj (°C)
1
100
0.5
0 0 40 80 120 160 200 Ttp (°C)
0 0 50 VR (%VRmax) 100
VR = VRRMmax; δ = 0.5; a = 1.57.
Fig.2
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
Device mounted as shown in Fig.8. Solid line: Al2O3 printed-circuit board. Dotted line: epoxy printed-circuit board.
Fig.3
Maximum permissible junction temperature as a function of reverse voltage.
102 handbook, halfpage IF (A)
MCD790
102 handbook, halfpage IR (µA) Tj = 165 °C
MCD804
10
10
1
1
10−1
10−1
10−2
10−2
Tj = 25 °C
10−3
0
1
2
VF (V)
3
10−3
0
20
40
60
80 100 VR (%VRmax)
Tj = 25 °C.
Fig.4
Forward current as a function of forward voltage; typical values.
Fig.5
Reverse current as a function of reverse voltage; typical values.
2000 Feb 14
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Philips Semiconductors
Product specification
SMA ultra fast low-loss controlled avalanche rectifiers
ES1 series
102 handbook, halfpage
MCD799
102 handbook, halfpage
MBL120
Cd (pF)
Zth j-tp (K/W)
10
10
1 10−2
10−1
1
10
VR (V)
102
1
1
10
102
103
tp (ms)
104
f = 1 MHz; Tj = 25 °C.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
Fig.7
Transient thermal impedance as a function of pulse width.
50
4.5 50 2.5
1.25
MSB213
Dimensions in mm. Material: Al2O3 or epoxy-glass.
Fig.8
Printed-circuit board for surface mounting.
2000 Feb 14
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Philips Semiconductors
Product specification
SMA ultra fast low-loss controlled avalanche rectifiers
ES1 series
handbook, full pagewidth
DUT +
IF (A) 0.5 1Ω t rr
10 Ω
25 V 50 Ω 0 0.25 0.5 IR (A) 1.0
t
MAM057
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns. Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.9 Test circuit and reverse recovery time waveform and definition.
2000 Feb 14
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Philips Semiconductors
Product specification
SMA ultra fast low-loss controlled avalanche rectifiers
PACKAGE OUTLINE Transfer-moulded thermo-setting plastic small rectangular surface mounted package; 2 connectors
ES1 series
SOD124
H D
A A1 c Q
E
b
(1)
0
2.5 scale
5 mm
DIMENSIONS (mm are the .