ESM2012DV

® ESM2012DV NPN DARLINGTON POWER MODULE s HIGH CURRENT POWER BIPOLAR MODULE s VERY LOW Rth JUNCTION TO CASE s SPECIFIED ACCIDENTAL OVERLOAD AREAS s ULTRAFAST FREEWHEELING DIODE )s FULLY INSULATED PACKAGE (UL t(sCOMPLIANT) cs EASY TO MOUNT us LOW INTERNAL PARASITIC INDUCTANCE rodINDUSTRIAL APPLICATIONS: Ps MOTOR CONTROL tes UPS - Obsoles DC/DC & DC/AC CONVERTERS ISOTOP INTERNAL SCHEMATIC DIAGRAM olete Product(s)ABSOLUTE MAXIMUM RATINGS bsSymbol Parameter O VCEV Collector-Emitter Voltage (VBE = -5 V) Value 150 Unit V VCEO(sus) Collector-Emitter Voltage (IB = 0) 120 V VEBO Emitter-Base Voltage (IC = 0) 7V IC Collector Current 120 A ICM Collector Peak Current (tp = 10 ms) 180 A IB Base Current 2A IBM Base Peak Current (tp = 10 ms) Ptot Total Dissipation at Tc = 25 oC 4A 175 W Visol Insulation Withstand Voltage (RMS) from All Four Terminals to Exernal Heatsink Tstg Storage Temperature Tj Max. Operating Junction Temperature 2500 -55 to 150 150 V oC oC September 2003 1/8 ESM2012DV THERMAL DATA Rthj-case Rthj-case Rthc-h Thermal Resistance Junction-case (transistor) Thermal Resistance Junction-case (diode) Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max Max 0.7 0.9 0.05 oC/W oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICER # Collector Cut-off Current (RBE = 5 Ω) VCE = VCEV VCE = VCEV Tj = 100 oC 1.5 mA 10 mA ICEV # Collector Cut...