ESM5045DV

® ESM5045DV NPN DARLINGTON POWER MODULE s HIGH CURRENT POWER BIPOLAR MODULE s VERY LOW Rth JUNCTION CASE s SPECIFIED ACCIDENTAL OVERLOAD AREAS s ULTRAFAST FREEWHEELING DIODE )s FULLY INSULATED PACKAGE (UL t(sCOMPLIANT) cs EASY TO MOUNT us LOW INTERNAL PARASITIC INDUCTANCE rod )INDUSTRIAL APPLICATIONS: P t(ss MOTOR CONTROL te cs SMPS & UPS ) - Obsolleete Produs WELDING EQUIPMENT ISOTOP INTERNAL SCHEMATIC DIAGRAM solete Prroodduucctt((ss) - ObsoABSOLUTE MAXIMUM RATINGS b PSymbol Parameter O teVCEV Collector-Emitter Voltage (VBE = -5 V) leVCEO(sus) Collector-Emitter Voltage (IB = 0) oVEBO Emitter-Base Voltage (IC = 0) sIC Collector Current ObICM Collector Peak Current (tp = 10 ms) Value 600 450 7 60 90 Unit V V V A A IB Base Current 6A IBM Base Peak Current (tp = 10 ms) Ptot Total Dissipation at Tc = 25 oC 12 A 175 W Visol Insulation Withstand Voltage (RMS) from All Four Terminals to Exernal Heatsink Tstg Storage Temperature Tj Max. Operating Junction Temperature 2500 -55 to 150 150 V oC oC September 2003 1/8 ESM5045DV THERMAL DATA Rthj-case Rthj-case Rthc-h Thermal Resistance Junction-case (transistor) Thermal Resistance Junction-case (diode) Thermal Resistance Case-heatsink With Conductive Grease Applied Max Max Max 0.71 1.2 0.05 oC/W oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICER # Collector Cut-off Current (RBE = 5 Ω) VCE = VCEV VCE = VCEV Tj = 1...