EZ0150

Avalanche Diodes with built-in Thyristor Absolute Maximum Ratings Parameter Type No. VRDC (V) (–10ºC) ITSM (A) 50Hz Half-cycle Sinewave Single Shot Electrical Characteristics (Ta = 25°C) Tstg (°C) VZ (V) IR (µA) VR = VRM max IR (H) (µA) VR = VRM Ta =100°C max Others Tj (°C) (typ.) Mass Fig. (g) RZ1030 RZ1040 RZ1055 RZ1065 RZ1100 RZ1125 RZ1150 RZ1175 RZ1200 EZ0150 20 28 40 27 to 33 34 to 40 50 to 60 60 to 70 30 –10 to +125 –40 to +150 90 to 110 115 to 135 140 to 160 165 to 185 185 to 215 140 to 160 0.03 0.05 0.07 0.44 10 50 0.18 0.22 0.30 0.18 0.2 B A * * * 50 80 105 125 150 180 125 * DC reverse blocking voltage VR (DC) (V) Under development RZ1030 22 RZ1040 50 Reverse breakdown voltage VZ (V) VR(DC) Temperature characteristic VZ Temperature dependence DC reverse blocking voltage VR(DC) (V) 30 VR(DC) Temperature characteristic Reverse breakdown voltage VZ (V) 55 50 45 40 38 35 30 28 25 VZ Temperature dependence 21 45 40 35 31.9 30 25.9 25 22 20 –10 0 max min 36 29 max 20 28 min 19 30 27 VRDC Temperature characteristic 18 VRDC Temperature characteristic 26 –10 0 25 50 75 100 125 25 50 75 100 125 –10 0 25 50 75 100 125 –10 0 25 50 75 100 125 Ambient Temperature Ta (°C) Ambient Temperature Ta (°C) Ambient Temperature Ta (°C) Ambient Temperature Ta (°C) RZ1055 45 DC reverse blocking voltage VR (DC) (V) RZ1065 70 Reverse breakdown voltage VZ (V) VR(DC) Temperature characteristic VZ Temperature dependence 67 max 65 6...