Transistors
EMG4 / EMH4 / UMG4N / UMH4N / UMH8N / FMG4A / IMH4A / IMH8A
General purpose (dual digital transistors)
EMG...
Transistors
EMG4 / EMH4 / UMG4N / UMH4N / UMH8N / FMG4A / IMH4A / IMH8A
General purpose (dual digital
transistors)
EMG4 / EMH4 / UMG4N / UMH4N / UMH8N FMG4A / IMH4A / IMH8A
!Features 1) Two DTC114T chips in a EMT or UMT or SMT package.
!Equivalent circuits
EMG4 / UMG4N
(3) (2) (1)
EMH4 / UMH4N
(3) (2) (1)
UMH8N
(3) (2) (1)
R1 R1 R1
R1
R1
(4) (5)/(6) (4) (5) (6)
R1
(4) (5) (6)
FMG4A
(3) (4) (5)
IMH4A
(4) (5) (6)
IMH8A
(4) (5) (6)
R1 R1 R1
R1
R1
(2) (1) (3) (2) (1)
R1
(3) (2) (1)
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
EMG4 / EMH4 / UMG4N / UMH4N / UMH8N Power dissipation FMG4A / IMH4A / IMH8A
Symbol VCBO VCEO VEBO IC Pd Tj Tstg
Limits 50 50 5 100 150(TOTAL) 300(TOTAL) 150 −55~+150
Unit V V V mA mW
∗1 ∗2
Junction temperature Storage temperature
∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded.
°C °C
!Electrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance
∗Transition frequency of the device.
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT R1
Min. 50 50 5 − − − 100 − 7
Typ. − − − − − − 250 250 10
Max. − − − 0.5 0.5 0.3 600 − 13
Unit V V V µA µA V − MHz kΩ IC=50µA IC=1mA IE=50µA VCB=50...